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Computer-aided design --- Metal oxide semiconductors, Complementary --- Conception assistée par ordinateur --- MOS complémentaires --- Design and construction --- Data processing --- Conception et construction --- Informatique

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Metal oxide semiconductors, Complementary --- Digital integrated circuits --- MOS complémentaires --- Circuits intégrés numériques --- Design and construction --- Conception et construction.

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Integrated circuits --- Metal oxide semiconductors, Complementary --- Circuits intégrés à très grande échelle --- MOS complémentaires. --- Very large scale integration --- Design and construction --- Conception et construction. --- Circuits intégrés à très grande échelle --- MOS complémentaires.

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Electronic circuit design --- Integrated circuits --- Metal oxide semiconductors, Complementary --- Circuits électroniques --- Circuits intégrés à très grande échelle --- MOS complémentaires --- Very large scale integration --- Calcul --- CMOS (Electronics) --- Complementary metal oxide semiconductors --- Semiconductors, Complementary metal oxide --- Digital electronics --- Logic circuits --- Transistor-transistor logic circuits --- Electronic circuits --- Design --- Circuits électroniques --- Circuits intégrés à très grande échelle --- MOS complémentaires --- Very large scale integration of circuits --- VLSI circuits --- Circuits intégrés à très grande échelle. --- MOS complémentaires. --- Calcul. --- Circuits intégrés à très grande échelle. --- MOS complémentaires.

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Scaling transistors into the nanometer regime has resulted in a dramatic increase in MOS leakage (i.e., off-state) current. Threshold voltages of transistors have scaled to maintain performance at reduced power supply voltages. Leakage current has become a major portion of the total power consumption, and in many scaled technologies leakage contributes 30-50% of the overall power consumption under nominal operating conditions. Leakage is important in a variety of different contexts. For example, in desktop applications, active leakage power (i.e., leakage power when the processor is computing) is becoming significant compared to switching power. In battery operated systems, standby leakage (i.e., leakage when the processor clock is turned off) dominates as energy is drawn over long idle periods. Increased transistor leakages not only impact the overall power consumed by a CMOS system, but also reduce the margins available for design due to the strong relationship between process variation and leakage power. It is essential for circuit and system designers to understand the components of leakage, sensitivity of leakage to different design parameters, and leakage mitigation techniques in nanometer technologies. This book provides an in-depth treatment of these issues for researchers and product designers.

Metal oxide semiconductors, Complementary --- Integrated circuits --- Electric leakage --- Design and construction. --- Prevention. --- Electric action of points --- MOS complémentaires --- Circuits intégrés --- Fuite électrique --- Design and construction --- Prevention --- Conception et construction --- Prévention --- EPUB-LIV-FT SPRINGER-B LIVINGEN