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The initial motivation for the University of Delaware/Georgia Institute of Technology project was the then-newly discovered bandgap of InN, which was re-measured at ~0.7 eV, rather than the previous 1.9 eV. This made InGaN a potential material for solar cells with the possibility of absorbing 99% of the solar irradiance. The advantages of the InGaN material system are the wide range of direct bandgap, high absorption coefficient, a low effective mass (high mobility), and strong polarization effects. However, the challenges include material quality, defect density, doping, substrates, and growth issues. Our project led to the understanding of the above challenges; in particular, we studied the material quality in terms of phase separation and how to suppress it. We modeled polarization and developed a solar cell design with these new models.

Photovoltaic cells --- Solar cells --- Research. --- Design and construction.