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* Associated Web site (cmosedu.com) provides examples, solutions, and SPICE simulation netlists

Integrated circuits --- Metal oxide semiconductor field-effect transistors. --- Metal oxide semiconductors, Complementary --- Design and construction. --- Metal oxide semiconductor field-effect transistors --- MOSFET --- Field-effect transistors --- Metal oxide semiconductors --- Design and construction

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Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction: A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter. The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance. The impact of process parameters on the matching properties is discussed. The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor. Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.

Metal oxide semiconductor field-effect transistors. --- Transistor circuits. --- Electronic circuits --- Transistors --- MOSFET --- Field-effect transistors --- Metal oxide semiconductors --- Systems engineering. --- Physics. --- Electronics. --- Engineering. --- Computer engineering. --- Circuits and Systems. --- Physics, general. --- Electronics and Microelectronics, Instrumentation. --- Engineering, general. --- Electrical Engineering. --- Computers --- Construction --- Industrial arts --- Technology --- Electrical engineering --- Physical sciences --- Natural philosophy --- Philosophy, Natural --- Dynamics --- Engineering systems --- System engineering --- Engineering --- Industrial engineering --- System analysis --- Design and construction --- Electronic circuits. --- Microelectronics. --- Electrical engineering. --- Electric engineering --- Microminiature electronic equipment --- Microminiaturization (Electronics) --- Electronics --- Microtechnology --- Semiconductors --- Miniature electronic equipment --- Electron-tube circuits --- Electric circuits --- Electron tubes

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Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.

Integrated circuits --- Semiconductors. --- Metal oxide semiconductor field-effect transistors --- Gate array circuits --- Dielectrics. --- Very large scale integration --- Materials. --- Materials --- Gate arrays --- MOSFET --- Field-effect transistors --- Metal oxide semiconductors --- Crystalline semiconductors --- Semi-conductors --- Semiconducting materials --- Semiconductor devices --- Crystals --- Electrical engineering --- Electronics --- Solid state electronics --- Chips (Electronics) --- Circuits, Integrated --- Computer chips --- Microchips --- Electronic circuits --- Microelectronics --- Electric insulators and insulation --- Optical materials. --- Surfaces (Physics). --- Engineering. --- Optical and Electronic Materials. --- Condensed Matter Physics. --- Surfaces and Interfaces, Thin Films. --- Engineering, general. --- Construction --- Industrial arts --- Technology --- Physics --- Surface chemistry --- Surfaces (Technology) --- Optics --- Electronic materials. --- Condensed matter. --- Materials—Surfaces. --- Thin films. --- Films, Thin --- Solid film --- Solids --- Coatings --- Thick films --- Condensed materials --- Condensed media --- Condensed phase --- Materials, Condensed --- Media, Condensed --- Phase, Condensed --- Liquids --- Matter --- Electronic materials --- Semiconductors --- Dielectrics --- Very large scale integration&delete&