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elektronica --- halfgeleider --- diode --- mosfet --- operationele versterker --- oscillator --- (zie ook: diode) --- opamp

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This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emphasis is placed on how the BSIM model evolved into the first ever industry standard SPICE MOSFET model for circuit simulation and CMOS technology development. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be ro

Metal oxide semiconductor field-effect transistors --- Electronic circuit design --- MOSFET --- Field-effect transistors --- Metal oxide semiconductors --- Computer simulation. --- Data processing.

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CE+T Power is a Belgian company and a leading producer of modular inverters and modular UPS. Founded in 1934, CE+T Power has been specializing in power electronics since the 1960's and they invented the modular inverter in the end of the 1980’s. They provide power solutions to enterprises to secure their critical applications against power failures. Therefore, CE+T is always progressing in the field of power electronics by offering the best modular inverters. A DC/DC converter is a building block of an inverter. So, a high-performance DC/DC converter is necessary for their products. 

The main objective of this work is two-fold. The first objective is to study a DC/DC converter topology known as Multi Resonant Interleaved Boost Converter and to evaluate its performance and behaviour. The second objective is to utilize the knowledge gained and implement it to optimize a prototype of DC/DC converter called as `CE+T E-Once 350VA DC/DC Converter'.

First the `CE+T E-Once 350VA DC/DC Converter' is tested and its various characteristics such as ripple current, ZCS behaviour of active switches, voltage gain and stability are evaluated. Then the potential improvements are identified. To achieve the improvements, a list of required hardware and software changes is established. The modifications are introduced in the circuit, one at a time and various tests are carried out to validate the modifications introduced. Once, all the necessary changes are done, the new version of the converter is called `Optimized Multi Resonant Interleaved Boost Converter'.

In comparison to the `CE+T E-Once 350VA DC/DC Converter', the `Optimized Multi Resonant Interleaved Boost Converter' has lower input ripple current, lower voltage stress across the MOSFET switches, lower current peaks in the MOSFET's drain current and lower energy circulating in the resonant tank; all of which led to reduced losses and better efficiency. 

This project consisted of theoretical research as well as hands-on experience with DC/DC converters. Various concepts such as zero-current switching and resonant converters were studied and implemented in practical.

DC/DC converter --- resonant converter --- ZCS for MOSFET --- inverse coupled inductor --- Ingénierie, informatique & technologie > Ingénierie électrique & électronique

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In this book, Complementary Metal Oxide Semiconductor ( CMOS ) devices are extensively discussed. The topics encompass the technology advancement in the fabrication process of metal oxide semiconductor field effect transistors or MOSFETs (which are the fundamental building blocks of CMOS devices) and the applications of transistors in the present and future eras. The book is intended to provide information on the latest technology development of CMOS to researchers, physicists, as well as engineers working in the field of semiconductor transistor manufacturing and design.

Metal oxide semiconductor field-effect transistors. --- MOSFET --- Field-effect transistors --- Metal oxide semiconductors --- Engineering --- Physical Sciences --- Engineering and Technology --- Electrical and Electronic Engineering --- Electronic Devices and Materials

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This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.

Metal oxide semiconductor field-effect transistors. --- Metal oxide semiconductor field-effect transistors --- MOSFET --- Field-effect transistors --- Metal oxide semiconductors --- Mathematical models.