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This is a collection of 18 papers, two of which are reviews and seven are invited feature papers, that together form the Photonics Special Issue “Semiconductor Laser Dynamics: Fundamentals and Applications”, published in 2020. This collection is edited by Daan Lenstra, an internationally recognized specialist in the field for 40 years.

History of engineering & technology --- injection locking --- optical filter --- semiconductor laser --- optical comb --- semiconductor lasers --- nonlinear dynamics --- optical injection --- chaos synchronization --- intra-cavity propagation delay --- secure optical communication --- quantum dot lasers --- excited-state --- chaos --- chaotic communication --- communication system security --- coupled lasers --- stability --- normal modes --- coupled modes --- optical injection locking --- microwave carrier generation --- hybrid photonic integration --- locking range --- photonic integrated circuit --- microwave generation --- laser dynamics --- optoelectronics oscillator --- photonic integrated circuits --- mutual coupling --- semiconductor ring laser --- optical feedback --- laser stability --- parity–time symmetry --- intensity dynamics --- feedback --- delay --- reservoir computing --- neuromorphic computing --- two delay-coupled lasers --- weak coupling limit --- optically injected laser --- InP semiconductor optical amplifier --- hybrid integration --- narrow intrinsic linewidth --- dual-wavelength laser --- laser frequency comb --- integrated photonic circuits --- low-loss Si3N4 waveguides --- external-cavity diode laser --- interference filter --- laser diode --- laser stabilization --- space optical clock --- high-speed VCSELs --- multi-mode VCSELs --- intrinsic laser dynamics --- equivalent circuit modeling --- intrinsic modulation response --- bifurcations --- laser chaos --- chaotic laser diode --- dynamics and stability --- laser coupling --- integrated lasers

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Owing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at high temperature environments and low sensitivity to ionizing radiation, gallium nitride (GaN) and related group III-nitride heterostructures proved to be enabling materials for advanced optoelectronic and electronic devices and systems. Today, they are widely used in high performing short wavelength light emitting diodes (LEDs) and laser diodes (LDs), high performing radar, wireless telecommunications, as well ‘green’ power electronics. Impressive progress in GaN technology over the last 25 years has been driven by a continuously growing need for more advanced systems, and still new challenges arise and need to be solved. Actually, lighting industry, RF defene industry, and 5G mmWave telecommunication systems are driving forces for further intense research in order to reach full potential of GaN-based semiconductors. In the literature, there is a number of review papers and publications reporting technology progress and indicating future trends. In this Special Issue of Electronics, eight papers are published, the majority of them focusing materials and process technology of GaN-based devices fabricated on native GaN substrates. The specific topics include: GaN single crystalline substrates for electronic devices by ammonothermal and HVPE methods, Selective – Area Metalorganic Vapour – Phase Epitaxy of GaN and AlGaN/GaN hetereostructures for HEMTs, Advances in Ion Implantation of GaN and Related Materials including high pressure processing (lattice reconstruction) of ion implanted GaN (Mg and Be) and III-Nitride Nanowires for electronic and optoelectronic devices.

Technology: general issues --- GaN HEMT --- self-heating effect --- microwave power amplifier --- thermal impedance --- thermal time constant --- thermal equivalent circuit --- GaN --- crystal growth --- ammonothermal method --- HVPE --- ion implantation --- gallium nitride --- thermodynamics --- ultra-high-pressure annealing --- diffusion --- diffusion coefficients --- molecular beam epitaxy --- nitrides --- laser diode --- tunnel junction --- LTE --- AlN --- AlGaN/GaN --- interface state density --- conductance-frequency --- MISHEMT --- gallium nitride nanowires --- polarity --- Kelvin probe force microscopy --- selective area growth --- selective epitaxy --- AlGaN/GaN heterostructures --- edge effects --- effective diffusion length --- MOVPE --- nanowires --- AlGaN --- LEDs --- growth polarity --- GaN HEMT --- self-heating effect --- microwave power amplifier --- thermal impedance --- thermal time constant --- thermal equivalent circuit --- GaN --- crystal growth --- ammonothermal method --- HVPE --- ion implantation --- gallium nitride --- thermodynamics --- ultra-high-pressure annealing --- diffusion --- diffusion coefficients --- molecular beam epitaxy --- nitrides --- laser diode --- tunnel junction --- LTE --- AlN --- AlGaN/GaN --- interface state density --- conductance-frequency --- MISHEMT --- gallium nitride nanowires --- polarity --- Kelvin probe force microscopy --- selective area growth --- selective epitaxy --- AlGaN/GaN heterostructures --- edge effects --- effective diffusion length --- MOVPE --- nanowires --- AlGaN --- LEDs --- growth polarity

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• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

This is a collection of 18 papers, two of which are reviews and seven are invited feature papers, that together form the Photonics Special Issue “Semiconductor Laser Dynamics: Fundamentals and Applications”, published in 2020. This collection is edited by Daan Lenstra, an internationally recognized specialist in the field for 40 years.

History of engineering & technology --- injection locking --- optical filter --- semiconductor laser --- optical comb --- semiconductor lasers --- nonlinear dynamics --- optical injection --- chaos synchronization --- intra-cavity propagation delay --- secure optical communication --- quantum dot lasers --- excited-state --- chaos --- chaotic communication --- communication system security --- coupled lasers --- stability --- normal modes --- coupled modes --- optical injection locking --- microwave carrier generation --- hybrid photonic integration --- locking range --- photonic integrated circuit --- microwave generation --- laser dynamics --- optoelectronics oscillator --- photonic integrated circuits --- mutual coupling --- semiconductor ring laser --- optical feedback --- laser stability --- parity–time symmetry --- intensity dynamics --- feedback --- delay --- reservoir computing --- neuromorphic computing --- two delay-coupled lasers --- weak coupling limit --- optically injected laser --- InP semiconductor optical amplifier --- hybrid integration --- narrow intrinsic linewidth --- dual-wavelength laser --- laser frequency comb --- integrated photonic circuits --- low-loss Si3N4 waveguides --- external-cavity diode laser --- interference filter --- laser diode --- laser stabilization --- space optical clock --- high-speed VCSELs --- multi-mode VCSELs --- intrinsic laser dynamics --- equivalent circuit modeling --- intrinsic modulation response --- bifurcations --- laser chaos --- chaotic laser diode --- dynamics and stability --- laser coupling --- integrated lasers --- injection locking --- optical filter --- semiconductor laser --- optical comb --- semiconductor lasers --- nonlinear dynamics --- optical injection --- chaos synchronization --- intra-cavity propagation delay --- secure optical communication --- quantum dot lasers --- excited-state --- chaos --- chaotic communication --- communication system security --- coupled lasers --- stability --- normal modes --- coupled modes --- optical injection locking --- microwave carrier generation --- hybrid photonic integration --- locking range --- photonic integrated circuit --- microwave generation --- laser dynamics --- optoelectronics oscillator --- photonic integrated circuits --- mutual coupling --- semiconductor ring laser --- optical feedback --- laser stability --- parity–time symmetry --- intensity dynamics --- feedback --- delay --- reservoir computing --- neuromorphic computing --- two delay-coupled lasers --- weak coupling limit --- optically injected laser --- InP semiconductor optical amplifier --- hybrid integration --- narrow intrinsic linewidth --- dual-wavelength laser --- laser frequency comb --- integrated photonic circuits --- low-loss Si3N4 waveguides --- external-cavity diode laser --- interference filter --- laser diode --- laser stabilization --- space optical clock --- high-speed VCSELs --- multi-mode VCSELs --- intrinsic laser dynamics --- equivalent circuit modeling --- intrinsic modulation response --- bifurcations --- laser chaos --- chaotic laser diode --- dynamics and stability --- laser coupling --- integrated lasers

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• Reference Manager
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Owing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at high temperature environments and low sensitivity to ionizing radiation, gallium nitride (GaN) and related group III-nitride heterostructures proved to be enabling materials for advanced optoelectronic and electronic devices and systems. Today, they are widely used in high performing short wavelength light emitting diodes (LEDs) and laser diodes (LDs), high performing radar, wireless telecommunications, as well ‘green’ power electronics. Impressive progress in GaN technology over the last 25 years has been driven by a continuously growing need for more advanced systems, and still new challenges arise and need to be solved. Actually, lighting industry, RF defene industry, and 5G mmWave telecommunication systems are driving forces for further intense research in order to reach full potential of GaN-based semiconductors. In the literature, there is a number of review papers and publications reporting technology progress and indicating future trends. In this Special Issue of Electronics, eight papers are published, the majority of them focusing materials and process technology of GaN-based devices fabricated on native GaN substrates. The specific topics include: GaN single crystalline substrates for electronic devices by ammonothermal and HVPE methods, Selective – Area Metalorganic Vapour – Phase Epitaxy of GaN and AlGaN/GaN hetereostructures for HEMTs, Advances in Ion Implantation of GaN and Related Materials including high pressure processing (lattice reconstruction) of ion implanted GaN (Mg and Be) and III-Nitride Nanowires for electronic and optoelectronic devices.

Technology: general issues --- GaN HEMT --- self-heating effect --- microwave power amplifier --- thermal impedance --- thermal time constant --- thermal equivalent circuit --- GaN --- crystal growth --- ammonothermal method --- HVPE --- ion implantation --- gallium nitride --- thermodynamics --- ultra-high-pressure annealing --- diffusion --- diffusion coefficients --- molecular beam epitaxy --- nitrides --- laser diode --- tunnel junction --- LTE --- AlN --- AlGaN/GaN --- interface state density --- conductance-frequency --- MISHEMT --- gallium nitride nanowires --- polarity --- Kelvin probe force microscopy --- selective area growth --- selective epitaxy --- AlGaN/GaN heterostructures --- edge effects --- effective diffusion length --- MOVPE --- nanowires --- AlGaN --- LEDs --- growth polarity --- n/a

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Semiconductor lasers are key components in many optical systems due to their advantages, including their small size, low cost, high efficiency, and low power consumption. It is well-known that semiconductor lasers under external perturbations, such as optical injection, optical feedback, or delayed coupling can exhibit a large variety of complex dynamical behaviors. Nowadays, cutting-edge engineering applications based on the complex dynamics of diode lasers are being conducted in areas, such as optical communications, optical signal processing, encoded communications, neuro-inspired ultra-fast optical computing devices, microwave signal generation, RADAR and LIDAR applications, biomedical imaging, and broadband spectroscopy. The prospects for these applications are even more exciting with the advent of photonic integrated circuits. This Special Issue focuses on theoretical and experimental advances in the nonlinear dynamics of semiconductor lasers subject to different types of external perturbations.

spin-VCSELs --- laser arrays --- laser dynamics --- spin flip model --- coupled lasers --- optoelectronics --- OLED --- laser --- organic laser diode --- nonlinear dynamics --- quantum dot lasers --- optical feedback --- chaotic --- linewidth enhancement factor (LEF) --- interband cascade laser --- mid-infrared chaos --- semiconductor laser --- optical phase --- gain-switching --- spontaneous emission noise --- quantum random number generation --- semiconductor lasers --- mutual coupling --- asymmetric coupling strength --- symmetry breaking --- narrow-linewidth lasers --- laser stability --- long delay --- injection-locking --- noise --- simulation --- pulsation --- chaos --- optical injection --- excitability --- neuromorphic dynamics --- modulation --- locking --- low-frequency fluctuations --- optical frequency comb --- polarization switching --- VCSEL