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Article
Practical valence-bond calculations

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Abstract


Book
Foundations of quantum chemistry
Author:
ISBN: 0471674540 Year: 1968 Publisher: London : Wiley,


Book
Valence.
Author:
Year: 1961 Publisher: London : Oxford university press,

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Perspectives on structure and mechanism in organic chemistry
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ISBN: 0534249485 9780534249489 Year: 1998 Publisher: Pacific Grove: Brooks/Cole publishing company,


Book
Electronic Structure of Semiconductor Interfaces
Authors: ---
ISBN: 9783031590641 Year: 2024 Publisher: Cham Springer Nature Switzerland :Imprint: Springer

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This concise volume examines the characteristic electronic parameters of semiconductor interfaces, namely the barrier heights of metal–semiconductor or Schottky contacts and the valence-band discontinuities of semiconductor–semiconductor interfaces or heterostructures. Both are determined by the same concept, namely the wave-function tails of electron states overlapping a semiconductor band gap directly at the interface. These interface-induced gap states (IFIGS) result from the complex band structure of the corresponding semiconductor. The IFIGS are characterized by two parameters, namely by their branch point, at which their charge character changes from predominantly valence-band- to conduction-band-like, and secondly by the proportionality factor or slope parameter of the corresponding electric-dipole term, which varies in proportion to the difference in the electronegativities of the two solids forming the interface. This IFIGS-and-electronegativity concept consistently and quantitatively explains the experimentally observed barrier heights of Schottky contacts as well as the valence-band offsets of heterostructures. Insulators are treated as wide band-gap semiconductors. In addition, this book: Explains the formation of interface-induced gap states and electric dipoles in Schottky contacts and heterostructures Includes experimental Schottky barrier heights, slope parameters, and valence-band offsets for a range of semiconductors Compares theoretical and experimental barrier heights of Schottky contacts and valence-band offsets of heterostructures.


Book
Electron spectroscopy : progress in research and applications : proceedings of the International conference on electron spectroscopy held in Namur, April 16-19, 1974
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ISBN: 0444412913 9780444412911 Year: 1974 Publisher: Amsterdam: Elsevier,

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Correlation and localization
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ISBN: 3540657541 354048972X 9783540657545 Year: 1999 Volume: 203 Publisher: Berlin: Springer,

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Abstract

Development in science depends on several factors. Among these, the role of individual scientists is perhaps not the most important one. Science is typically a body of collective knowledge and any increase in the amount of this knowledge is certainly due to strong interaction among scientists. Even in the past, it happened quite rarely that a single person, without any aid of others, d- covered something fundamental or opened a new chapter in science. Great figures of science history have, in most cases, had rather a summarizing and s- thesizing role. This is especially valid over the last few decades. On one hand, the amount of information necessary to achieve new discoveries, has increased tremendously. On the other hand, improvement of technical facilities has increased the speed of information exchange. These factors resulted in a degree of specialization in science that had never seen before. Most of us are experts and specialists rather than scientists in the classical sense. My personal feeling is that, even nowadays, there is a strong need for professionals with a broad knowledge and c- prehensive mind, although they may not be competitive in the number of their publications or the sizes of their grants. Every time I have met such a person (I can count these cases on my fingers) I have become deeply influenced by his or her strong intellect.


Book
The nature of the chemical bond and the structure of molecules and crystals : an introduction to modern structural chemistry
Author:
Year: 1960 Publisher: Ithaca (N.Y.) : Cornell university press,

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