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The renewable generation system is currently experiencing rapid growth in various power grids. The stability and dynamic response issues of power grids are receiving attention due to the increase in power electronics-based renewable energy. The main focus of this Special Issue is to provide solutions for power system planning and operation. Power electronics-based devices can offer new ancillary services to several industrial sectors. In order to fully include the capability of power conversion systems in the network integration of renewable generators, several studies should be carried out, including detailed studies of switching circuits, and comprehensive operating strategies for numerous devices, consisting of large-scale renewable generation clusters.

Technology: general issues --- isolated microgrid --- renewable energy source --- diesel generator --- battery energy storage system --- hierarchical control --- power systems --- floquet multiplier --- poincaré map --- time series data --- DFIG --- renewable energy --- battery energy storage system (BESS) --- control strategy --- modular multilevel converter --- state-of-charge (SOC) equalization --- preliminary design --- optimization --- rotor loss --- guide vane outlet flow angle --- radial turbine --- CAES --- deadbeat control --- discrete space vector modulation --- computation efficiency --- model predictive control --- grid connected system --- three-level system --- T-type inverter --- PV diagnosis --- ESS application --- DC power flow --- DC system dynamics --- hybrid generation system --- phase-locked loop (PLL) --- synchronization --- hybrid filter --- low-cost hybrid converter --- bi-directional converter --- parallel configuration of converters --- converter for multi-MW wind generator --- offshore wind energy converter applications --- AC-DC matrix converter --- virtual space vector --- DC ripple reduction --- microgeneration --- solar energy --- photovoltaic --- crowd funding --- solid-state circuit breaker --- microgrid protection --- DC protection --- SSCB --- short-term load forecasting --- two-stage forecasting model --- combined cooling heating and power --- energy operation plan --- economic analysis --- calculation load --- iterative methods --- fault restoration --- distribution generation --- temporary fault ride-through --- voltage control --- inrush current control --- isolated microgrid --- renewable energy source --- diesel generator --- battery energy storage system --- hierarchical control --- power systems --- floquet multiplier --- poincaré map --- time series data --- DFIG --- renewable energy --- battery energy storage system (BESS) --- control strategy --- modular multilevel converter --- state-of-charge (SOC) equalization --- preliminary design --- optimization --- rotor loss --- guide vane outlet flow angle --- radial turbine --- CAES --- deadbeat control --- discrete space vector modulation --- computation efficiency --- model predictive control --- grid connected system --- three-level system --- T-type inverter --- PV diagnosis --- ESS application --- DC power flow --- DC system dynamics --- hybrid generation system --- phase-locked loop (PLL) --- synchronization --- hybrid filter --- low-cost hybrid converter --- bi-directional converter --- parallel configuration of converters --- converter for multi-MW wind generator --- offshore wind energy converter applications --- AC-DC matrix converter --- virtual space vector --- DC ripple reduction --- microgeneration --- solar energy --- photovoltaic --- crowd funding --- solid-state circuit breaker --- microgrid protection --- DC protection --- SSCB --- short-term load forecasting --- two-stage forecasting model --- combined cooling heating and power --- energy operation plan --- economic analysis --- calculation load --- iterative methods --- fault restoration --- distribution generation --- temporary fault ride-through --- voltage control --- inrush current control

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The renewable generation system is currently experiencing rapid growth in various power grids. The stability and dynamic response issues of power grids are receiving attention due to the increase in power electronics-based renewable energy. The main focus of this Special Issue is to provide solutions for power system planning and operation. Power electronics-based devices can offer new ancillary services to several industrial sectors. In order to fully include the capability of power conversion systems in the network integration of renewable generators, several studies should be carried out, including detailed studies of switching circuits, and comprehensive operating strategies for numerous devices, consisting of large-scale renewable generation clusters.

Technology: general issues --- isolated microgrid --- renewable energy source --- diesel generator --- battery energy storage system --- hierarchical control --- power systems --- floquet multiplier --- poincaré map --- time series data --- DFIG --- renewable energy --- battery energy storage system (BESS) --- control strategy --- modular multilevel converter --- state-of-charge (SOC) equalization --- preliminary design --- optimization --- rotor loss --- guide vane outlet flow angle --- radial turbine --- CAES --- deadbeat control --- discrete space vector modulation --- computation efficiency --- model predictive control --- grid connected system --- three-level system --- T-type inverter --- PV diagnosis --- ESS application --- DC power flow --- DC system dynamics --- hybrid generation system --- phase-locked loop (PLL) --- synchronization --- hybrid filter --- low-cost hybrid converter --- bi-directional converter --- parallel configuration of converters --- converter for multi-MW wind generator --- offshore wind energy converter applications --- AC-DC matrix converter --- virtual space vector --- DC ripple reduction --- microgeneration --- solar energy --- photovoltaic --- crowd funding --- solid-state circuit breaker --- microgrid protection --- DC protection --- SSCB --- short-term load forecasting --- two-stage forecasting model --- combined cooling heating and power --- energy operation plan --- economic analysis --- calculation load --- iterative methods --- fault restoration --- distribution generation --- temporary fault ride-through --- voltage control --- inrush current control

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In this book, we aim to address the ever-advancing progress in microelectronic device scaling. Complementary Metal-Oxide-Semiconductor (CMOS) devices continue to endure miniaturization, irrespective of the seeming physical limitations, helped by advancing fabrication techniques. We observe that miniaturization does not always refer to the latest technology node for digital transistors. Rather, by applying novel materials and device geometries, a significant reduction in the size of microelectronic devices for a broad set of applications can be achieved. The achievements made in the scaling of devices for applications beyond digital logic (e.g., high power, optoelectronics, and sensors) are taking the forefront in microelectronic miniaturization. Furthermore, all these achievements are assisted by improvements in the simulation and modeling of the involved materials and device structures. In particular, process and device technology computer-aided design (TCAD) has become indispensable in the design cycle of novel devices and technologies. It is our sincere hope that the results provided in this Special Issue prove useful to scientists and engineers who find themselves at the forefront of this rapidly evolving and broadening field. Now, more than ever, it is essential to look for solutions to find the next disrupting technologies which will allow for transistor miniaturization well beyond silicon’s physical limits and the current state-of-the-art. This requires a broad attack, including studies of novel and innovative designs as well as emerging materials which are becoming more application-specific than ever before.

Research & information: general --- Mathematics & science --- FinFETs --- CMOS --- device processing --- integrated circuits --- silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) --- solid state circuit breaker (SSCB) --- prototype --- circuit design --- GaN --- HEMT --- high gate --- multi-recessed buffer --- power density --- power-added efficiency --- 4H-SiC --- MESFET --- IMRD structure --- power added efficiency --- 1200 V SiC MOSFET --- body diode --- surge reliability --- silvaco simulation --- floating gate transistor --- control gate --- CMOS device --- active noise control --- vacuum channel --- mean free path --- vertical air-channel diode --- vertical transistor --- field emission --- particle trajectory model --- F-N plot --- space-charge-limited currents --- 4H-SiC MESFET --- simulation --- power added efficiency (PAE) --- new device --- three-input transistor --- T-channel --- compact circuit style --- CMOS compatible technology --- avalanche photodiode --- SPICE model --- bandwidth --- high responsivity --- silicon photodiode --- AlGaN/GaN HEMTs --- thermal simulation --- transient channel temperature --- pulse width --- gate structures --- band-to-band tunnelling (BTBT) --- tunnelling field-effect transistor (TFET) --- germanium-around-source gate-all-around TFET (GAS GAA TFET) --- average subthreshold swing --- direct source-to-drain tunneling --- transport effective mass --- confinement effective mass --- multi-subband ensemble Monte Carlo --- non-equilibrium Green's function --- DGSOI --- FinFET --- core-insulator --- gate-all-around --- field effect transistor --- GAA --- nanowire --- one-transistor dynamic random-access memory (1T-DRAM) --- polysilicon --- grain boundary --- electron trapping --- flexible transistors --- polymers --- metal oxides --- nanocomposites --- dielectrics --- active layers --- nanotransistor --- quantum transport --- Landauer-Büttiker formalism --- R-matrix method --- nanoscale --- mosfet --- quantum current --- surface transfer doping --- 2D hole gas (2DHG) --- diamond --- MoO3 --- V2O5 --- MOSFET --- reliability --- random telegraph noise --- oxide defects --- SiO2 --- split-gate trench power MOSFET --- multiple epitaxial layers --- specific on-resistance --- device reliability --- nanoscale transistor --- bias temperature instabilities (BTI) --- defects --- single-defect spectroscopy --- non-radiative multiphonon (NMP) model --- time-dependent defect spectroscopy --- FinFETs --- CMOS --- device processing --- integrated circuits --- silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) --- solid state circuit breaker (SSCB) --- prototype --- circuit design --- GaN --- HEMT --- high gate --- multi-recessed buffer --- power density --- power-added efficiency --- 4H-SiC --- MESFET --- IMRD structure --- power added efficiency --- 1200 V SiC MOSFET --- body diode --- surge reliability --- silvaco simulation --- floating gate transistor --- control gate --- CMOS device --- active noise control --- vacuum channel --- mean free path --- vertical air-channel diode --- vertical transistor --- field emission --- particle trajectory model --- F-N plot --- space-charge-limited currents --- 4H-SiC MESFET --- simulation --- power added efficiency (PAE) --- new device --- three-input transistor --- T-channel --- compact circuit style --- CMOS compatible technology --- avalanche photodiode --- SPICE model --- bandwidth --- high responsivity --- silicon photodiode --- AlGaN/GaN HEMTs --- thermal simulation --- transient channel temperature --- pulse width --- gate structures --- band-to-band tunnelling (BTBT) --- tunnelling field-effect transistor (TFET) --- germanium-around-source gate-all-around TFET (GAS GAA TFET) --- average subthreshold swing --- direct source-to-drain tunneling --- transport effective mass --- confinement effective mass --- multi-subband ensemble Monte Carlo --- non-equilibrium Green's function --- DGSOI --- FinFET --- core-insulator --- gate-all-around --- field effect transistor --- GAA --- nanowire --- one-transistor dynamic random-access memory (1T-DRAM) --- polysilicon --- grain boundary --- electron trapping --- flexible transistors --- polymers --- metal oxides --- nanocomposites --- dielectrics --- active layers --- nanotransistor --- quantum transport --- Landauer-Büttiker formalism --- R-matrix method --- nanoscale --- mosfet --- quantum current --- surface transfer doping --- 2D hole gas (2DHG) --- diamond --- MoO3 --- V2O5 --- MOSFET --- reliability --- random telegraph noise --- oxide defects --- SiO2 --- split-gate trench power MOSFET --- multiple epitaxial layers --- specific on-resistance --- device reliability --- nanoscale transistor --- bias temperature instabilities (BTI) --- defects --- single-defect spectroscopy --- non-radiative multiphonon (NMP) model --- time-dependent defect spectroscopy

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"Based on research in previously closed Soviet archives, this book sheds light on the formative years of Soviet city planning and on state efforts to consolidate power through cityscape design. Stepping away from Moscow's central corridors of power, Heather D. DeHaan focuses her study on 1930s Nizhnii Novgorod, where planners struggled to accommodate the expectations of a Stalinizing state without sacrificing professional authority and power. Bridging institutional and cultural history, the book brings together a variety of elements of socialism as enacted by planners on a competitive urban stage, such as scientific debate, the crafting of symbolic landscapes, and state campaigns for the development of cultured cities and people. By examining how planners and other urban inhabitants experienced, lived, and struggled with socialism and Stalinism, DeHaan offers readers a much broader, more complex picture of planning and planners than has been revealed to date."--Jacket.

City planning --- City planners --- Architecture --- Architecture, Western (Western countries) --- Building design --- Buildings --- Construction --- Western architecture (Western countries) --- Art --- Building --- Town planners --- Urbanists --- Architects --- Planners --- Cities and towns --- Civic planning --- Land use, Urban --- Model cities --- Redevelopment, Urban --- Slum clearance --- Town planning --- Urban design --- Urban development --- Urban planning --- Land use --- Planning --- Art, Municipal --- Civic improvement --- Regional planning --- Urban policy --- Urban renewal --- History --- Political aspects --- Design and construction --- Government policy --- Management --- Stalin, Joseph, --- Influence. --- Architecture, Primitive --- Sowjetunion. --- UdSSR --- SSSR --- Republik-Republik Kesatuan Soviet Sosialis --- Sojuz Sovetskich Socialističeskich Respublik --- Union der Sozialistischen Sowjet-Republiken --- Union der SSR --- Union of Soviet Socialist Republics --- USSR --- Union des Républiques Socialistes Soviétiques --- URSS --- Russland --- Russia --- Padomju Sociālistiko Republiku Savienība --- PSRS --- SSṘM --- ZSSR --- TSRS --- Savez Sovjetskih Socijalističkih Republika --- Soviet Union --- SSHM --- Sojuz Radjans'kich Sozialističnich Respublik --- SRSR --- Şyra Sosjalist Cumhyrijjẹtlẹri Ittifakĭ --- Šura Socialist Gümhurietleri Ittipaky --- Šura Sosyalist Ǧümhuriyetleri Ittifaqï --- SSCB --- Союз Советских Социалистических Республик --- СССР --- 1923-25.12.1991 --- Djougatchvili, Iossif Vissarionovitch, --- Джугашвили, Иосиф Виссарионович, --- Dzhugashvili, Iosif Vissarionovich, --- Koba, --- Shih-tʻai-lin, --- Sidalin, --- Ssu-ta-lin, --- Stalin, Giuseppe, --- Сталин, И. В. --- Stalin, I. V. --- Сталин, Иосиф, --- Stalin, Iosif, --- Сталин, К., --- Stalin, K., --- Staline, --- Staline, Joseph, --- Staljin, J. V., --- Sutārin, --- Soselo, --- Stalini, Ioseb Besarionis że, --- Sṭalin, Y. Ṿ., --- Sṭalin, Y., --- Stalin, Josef, --- Stalin, Josef Vissarionovich, --- סטאלין, יאסיף, --- סטאלין, י. --- סטאלין, י. וו --- סטאלין, י. װ. --- סטאלין, י., --- סטלין, יוסיף ויסאריונוביץ׳, --- סטלין, יוסף --- 斯大林, --- Stalin, Jossif Vissarionovitš, --- Sztálin, Joszif, --- Istālīn, Yūsīf Vīsāryūnūvīch, --- استالين، يوسيف ويساريونووتج, --- Σταλιν, Ιωσηφ, --- Stalin, Ιōsēph, --- Jughashvili, Ioseb, --- Jughashvili, Ioseb Vissarionovich, --- Jughashvili, Koba, --- Sojuz Sovetskich Socialističeskich Respublik --- Union des Républiques Socialistes Soviétiques --- Padomju Sociālistiko Republiku Savienība --- SSṘM --- Savez Sovjetskih Socijalističkih Republika --- Sojuz Radjans'kich Sozialističnich Respublik --- Şyra Sosjalist Cumhyrijjẹtlẹri Ittifakĭ --- Šura Socialist Gümhurietleri Ittipaky --- Šura Sosyalist Ǧümhuriyetleri Ittifaqï

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In this book, we aim to address the ever-advancing progress in microelectronic device scaling. Complementary Metal-Oxide-Semiconductor (CMOS) devices continue to endure miniaturization, irrespective of the seeming physical limitations, helped by advancing fabrication techniques. We observe that miniaturization does not always refer to the latest technology node for digital transistors. Rather, by applying novel materials and device geometries, a significant reduction in the size of microelectronic devices for a broad set of applications can be achieved. The achievements made in the scaling of devices for applications beyond digital logic (e.g., high power, optoelectronics, and sensors) are taking the forefront in microelectronic miniaturization. Furthermore, all these achievements are assisted by improvements in the simulation and modeling of the involved materials and device structures. In particular, process and device technology computer-aided design (TCAD) has become indispensable in the design cycle of novel devices and technologies. It is our sincere hope that the results provided in this Special Issue prove useful to scientists and engineers who find themselves at the forefront of this rapidly evolving and broadening field. Now, more than ever, it is essential to look for solutions to find the next disrupting technologies which will allow for transistor miniaturization well beyond silicon’s physical limits and the current state-of-the-art. This requires a broad attack, including studies of novel and innovative designs as well as emerging materials which are becoming more application-specific than ever before.

FinFETs --- CMOS --- device processing --- integrated circuits --- silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) --- solid state circuit breaker (SSCB) --- prototype --- circuit design --- GaN --- HEMT --- high gate --- multi-recessed buffer --- power density --- power-added efficiency --- 4H-SiC --- MESFET --- IMRD structure --- power added efficiency --- 1200 V SiC MOSFET --- body diode --- surge reliability --- silvaco simulation --- floating gate transistor --- control gate --- CMOS device --- active noise control --- vacuum channel --- mean free path --- vertical air-channel diode --- vertical transistor --- field emission --- particle trajectory model --- F–N plot --- space-charge-limited currents --- 4H-SiC MESFET --- simulation --- power added efficiency (PAE) --- new device --- three-input transistor --- T-channel --- compact circuit style --- CMOS compatible technology --- avalanche photodiode --- SPICE model --- bandwidth --- high responsivity --- silicon photodiode --- AlGaN/GaN HEMTs --- thermal simulation --- transient channel temperature --- pulse width --- gate structures --- band-to-band tunnelling (BTBT) --- tunnelling field-effect transistor (TFET) --- germanium-around-source gate-all-around TFET (GAS GAA TFET) --- average subthreshold swing --- direct source-to-drain tunneling --- transport effective mass --- confinement effective mass --- multi-subband ensemble Monte Carlo --- non-equilibrium Green’s function --- DGSOI --- FinFET --- core-insulator --- gate-all-around --- field effect transistor --- GAA --- nanowire --- one-transistor dynamic random-access memory (1T-DRAM) --- polysilicon --- grain boundary --- electron trapping --- flexible transistors --- polymers --- metal oxides --- nanocomposites --- dielectrics --- active layers --- nanotransistor --- quantum transport --- Landauer–Büttiker formalism --- R-matrix method --- nanoscale --- mosfet --- quantum current --- surface transfer doping --- 2D hole gas (2DHG) --- diamond --- MoO3 --- V2O5 --- MOSFET --- reliability --- random telegraph noise --- oxide defects --- SiO2 --- split-gate trench power MOSFET --- multiple epitaxial layers --- specific on-resistance --- device reliability --- nanoscale transistor --- bias temperature instabilities (BTI) --- defects --- single-defect spectroscopy --- non-radiative multiphonon (NMP) model --- time-dependent defect spectroscopy --- n/a --- F-N plot --- non-equilibrium Green's function --- Landauer-Büttiker formalism