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Relaxation processes in micromagnetics
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ISBN: 0198528027 9780198528029 Year: 2007 Publisher: New York (N.Y.) : Oxford university press,

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Magneto-resistive and spin valve heads : fundamentals and applications
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ISBN: 1281054291 9786611054298 0080510639 0124666272 9780080510637 9780124666276 Year: 2002 Publisher: San Diego : Academic Press,

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This book is aims to be a comprehensive source on the physics and engineering of magneto-resistive heads. Most of the material is presented in a nonmathematical manner to make it more digestible for researchers, students, developers, and engineers.In addition to revising and updating material available in the first edition, Mallinson has added nine new chapters dealing with various aspects concerning spin valves, the electron spin tunneling effect, the electrostatic discharge effects, read amplifiers, and signal-to-noise ratios, making this a completely up-to-date reference.Th


Periodical
Magnetochemistry.
ISSN: 23127481 Year: 2015 Publisher: Basel, Switzerland : MDPI AG,

Introduction to magnetism and magnetic materials
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ISBN: 9780412798603 0412798603 0412798506 Year: 1998 Publisher: Boca Raton : CRC,


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Magnetic and Spin Devices
Authors: ---
Year: 2022 Publisher: Basel MDPI - Multidisciplinary Digital Publishing Institute

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As the scaling of electronic semiconductor devices displays signs of saturation, the main focus of research in microelectronics is shifting towards finding new computing paradigms. Electron spin offers additional functionality to digital charge-based devices. Several fundamental problems, including spin injection to a semiconductor, spin propagation and relaxation, and spin manipulation by the gate voltage, have been successfully resolved to open a path towards spin-based reprogrammable electron switches. Devices employing electron spin are nonvolatile; they are able to preserve the stored information without external power. Emerging nonvolatile devices are electrically addressable, possess a simple structure, and offer endurance and speed superior to flash memory. Having nonvolatile memory very close to CMOS offers a prospect of data processing in the nonvolatile segment, where the same devices are used to store and process the information. This opens perspectives for conceptually new low-power computing paradigms within Artificial Intelligence of Things (AIoT). This Special Issue focuses on all topics related to spintronic devices such as spin-based switches, magnetoresistive memories, energy harvesting devices, and sensors that can be employed in in-memory computing concepts and in Artificial Intelligence.


Book
Magnetic and Spin Devices
Authors: ---
Year: 2022 Publisher: Basel MDPI - Multidisciplinary Digital Publishing Institute

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Abstract

As the scaling of electronic semiconductor devices displays signs of saturation, the main focus of research in microelectronics is shifting towards finding new computing paradigms. Electron spin offers additional functionality to digital charge-based devices. Several fundamental problems, including spin injection to a semiconductor, spin propagation and relaxation, and spin manipulation by the gate voltage, have been successfully resolved to open a path towards spin-based reprogrammable electron switches. Devices employing electron spin are nonvolatile; they are able to preserve the stored information without external power. Emerging nonvolatile devices are electrically addressable, possess a simple structure, and offer endurance and speed superior to flash memory. Having nonvolatile memory very close to CMOS offers a prospect of data processing in the nonvolatile segment, where the same devices are used to store and process the information. This opens perspectives for conceptually new low-power computing paradigms within Artificial Intelligence of Things (AIoT). This Special Issue focuses on all topics related to spintronic devices such as spin-based switches, magnetoresistive memories, energy harvesting devices, and sensors that can be employed in in-memory computing concepts and in Artificial Intelligence.

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