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This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime. · Enables readers to understand and model negative bias temperature instability, with an emphasis on dynamics; · Includes coverage of DC vs. AC stress, duty factor dependence and bias dependence; · Explains time dependent defect spectroscopy, as a measurement method that operates on nanoscale MOSFETs; · Introduces new defect model for metastable defect states, nonradiative multiphonon theory and stochastic behavior.

Materials at high temperatures. --- Semiconductors --- Crystalline semiconductors --- Semi-conductors --- Semiconducting materials --- Semiconductor devices --- Effect of temperature on. --- Electric power transmission. --- Engineering. --- Semiconductors. --- Quality control. --- Reliability. --- Industrial safety. --- Electronics. --- Microelectronics. --- Electronic circuits. --- Circuits and Systems. --- Electronics and Microelectronics, Instrumentation. --- Quality Control, Reliability, Safety and Risk. --- High temperatures --- Materials --- Strength of materials --- Crystals --- Electrical engineering --- Electronics --- Solid state electronics --- Systems engineering. --- System safety. --- Safety, System --- Safety of systems --- Systems safety --- Accidents --- Industrial safety --- Systems engineering --- Physical sciences --- Engineering systems --- System engineering --- Engineering --- Industrial engineering --- System analysis --- Prevention --- Design and construction --- Industrial accidents --- Industries --- Job safety --- Occupational hazards, Prevention of --- Occupational health and safety --- Occupational safety and health --- Prevention of industrial accidents --- Prevention of occupational hazards --- Safety, Industrial --- Safety engineering --- Safety measures --- Safety of workers --- System safety --- Dependability --- Trustworthiness --- Conduct of life --- Factory management --- Reliability (Engineering) --- Sampling (Statistics) --- Standardization --- Quality assurance --- Quality of products --- Microminiature electronic equipment --- Microminiaturization (Electronics) --- Microtechnology --- Miniature electronic equipment --- Electron-tube circuits --- Electric circuits --- Electron tubes --- Metal oxide semiconductor field-effect transistors --- Semiconductor --- Quantum Dots --- Electric engineering --- MOSFET --- Field-effect transistors --- Metal oxide semiconductors --- Metal oxide semiconductor field-effect transistors.

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Microelectronics is one of the most rapidly changing scientific fields today. The tendency to shrink devices as far as possible results in extremely small devices which can no longer be described using simple analytical models. This book covers various aspects of advanced device modeling and simulation. As such it presents extensive reviews and original research by outstanding scientists. The bulk of the book is concerned with the theory of classical and quantum-mechanical transport modeling, based on macroscopic, spherical harmonics and Monte Carlo methods.

Microelectronics. --- Simulation methods. --- Simulation techniques --- System simulation --- Operations research --- Systems engineering --- Models and modelmaking --- Microminiature electronic equipment --- Microminiaturization (Electronics) --- Electronics --- Microtechnology --- Semiconductors --- Miniature electronic equipment

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This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance. • Describes the intricacies of hot carrier degradation in modern semiconductor technologies; • Covers the entire hot carrier degradation phenomenon, including topics such as characterization, carrier transport, carrier-defect interaction, technological impact, circuit impact, etc.; • Enables detailed understanding of carrier transport, interaction of the carrier ensemble with the defect precursors, and an accurate assessment of how the newly created defects impact the device performance. • Covers modeling issues starting from detailed physics-based TCAD approaches up to efficient SPICE-compatible compact models. “Tibor Grasser and the authors of Hot Carrier Degradation in Semiconductor Devices have made a major contribution to the field of hot-carrier degradation. I am emeritus since 2006 and believe that, after reading these great chapters, I could work again at the cutting edge of hot-carrier transport, from the basic physics to modern device function and from compact modeling to detailed Monte Carlo simulations. This is a must read for anyone interested in the reliability of semiconductor devices.” Karl Hess Swanlund Professor Emeritus University of Illinois, USA “Very few books can be found with special focus on microelectronics reliability. Written by noted experts in the field, this book offers a revealing look at various aspects of the hot carrier effect and associated device degradations. It provides a valuable reference on hot carrier related physics, experimental measurements, modeling, and practical demonstration on state-of-the-art devices. Engineering professionals, researchers, and students can use this book to save time and learn from the experts, with a quick overview of an important class of semiconductor devices and focus on device reliability physics.” Steve Chung Chair Professor National Chiao Tung University, Taiwan.

Electronics --- Electrical engineering --- elektronica --- micro-elektronica --- elektrische circuits

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What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.

MOSFET --- n/a --- total ionizing dose (TID) --- low power consumption --- process simulation --- two-dimensional material --- negative-capacitance --- power consumption --- technology computer aided design (TCAD) --- thin-film transistors (TFTs) --- band-to-band tunneling (BTBT) --- nanowires --- inversion channel --- metal oxide semiconductor field effect transistor (MOSFET) --- spike-timing-dependent plasticity (STDP) --- field effect transistor --- segregation --- systematic variations --- Sentaurus TCAD --- indium selenide --- nanosheets --- technology computer-aided design (TCAD) --- high-? dielectric --- subthreshold bias range --- statistical variations --- fin field effect transistor (FinFET) --- compact models --- non-equilibrium Green’s function --- etching simulation --- highly miniaturized transistor structure --- compact model --- silicon nanowire --- surface potential --- Silicon-Germanium source/drain (SiGe S/D) --- nanowire --- plasma-aided molecular beam epitaxy (MBE) --- phonon scattering --- mobility --- silicon-on-insulator --- drain engineered --- device simulation --- variability --- semi-floating gate --- synaptic transistor --- neuromorphic system --- theoretical model --- CMOS --- ferroelectrics --- tunnel field-effect transistor (TFET) --- SiGe --- metal gate granularity --- buried channel --- ON-state --- bulk NMOS devices --- ambipolar --- piezoelectrics --- tunnel field effect transistor (TFET) --- FinFETs --- polarization --- field-effect transistor --- line edge roughness --- random discrete dopants --- radiation hardened by design (RHBD) --- low energy --- flux calculation --- doping incorporation --- low voltage --- topography simulation --- MOS devices --- low-frequency noise --- high-k --- layout --- level set --- process variations --- subthreshold --- metal gate stack --- electrostatic discharge (ESD) --- non-equilibrium Green's function

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Dear Readers, Since the ground-breaking, Nobel-prize crowned work of Heeger, MacDiarmid, and Shirakawa on molecularly doped polymers and polymers with an alternating bonding structure at the end of the 1970s, the academic and industrial research on hydrocarbon-based semiconducting materials and devices has made encouraging progress. The strengths of semiconducting polymers are currently mainly unfolding in cheap and easily assembled thin ?lm transistors, light emitting diodes, and organic solar cells. The use of so-called “plastic chips” ranges from lightweight, portable devices over large-area applications to gadgets demanding a degree of mechanical ?exibility, which would overstress conventionaldevices based on inorganic,perfect crystals. The ?eld of organic electronics has evolved quite dynamically during the last few years; thus consumer electronics based on molecular semiconductors has gained suf?cient market attractiveness to be launched by the major manufacturers in the recent past. Nonetheless, the numerous challenges related to organic device physics and the physics of ordered and disordered molecular solids are still the subjects of a cont- uing lively debate. The future of organic microelectronics will unavoidably lead to new devi- physical insights and hence to novel compounds and device architectures of - hanced complexity. Thus, the early evolution of predictive models and precise, computationally effective simulation tools for computer-aided analysis and design of promising device prototypes will be of crucial importance.

Optics. Quantum optics --- Electronics and optics of solids --- Solid state physics --- Physicochemistry --- Macromolecules --- Theoretical spectroscopy. Spectroscopic techniques --- Organic chemistry --- Electrical engineering --- vaste stof --- materie (fysica) --- organische chemie --- spectroscopie --- microscopie --- elektronica --- transistoren --- halfgeleiders --- polymeren --- fysicochemie --- microwaves