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Circuits bandgap (références de tension) et capteur de température pour applications industrielles à hautes températures en technologie SOI
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Year: 1998 Publisher: Louvain-la-Neuve: UCL,

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Etude du transistor hybride MOS-bipolaire en technologie SOI et applications analogiques et digitales à basse tension d'alimentation
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Year: 1998 Publisher: Louvain-la-Neuve: UCL,

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Low power analog CMOS for cardiac pacemakers : design and optimization in bulk and SOI technologies
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ISBN: 140207719X 9781402077197 Year: 2004 Publisher: Boston: Kluwer Academic Publishers,

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Micromachined thin-film sensors for SOI-CMOS co-integration
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ISBN: 1280634375 9786610634378 0387288430 Year: 2006 Publisher: Dordrecht : Springer,

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Co-integration of sensors with their associated electronics on a single silicon chip may provide many significant benefits regarding performance, reliability, miniaturization and process simplicity without significantly increasing the total cost. Micromachined Thin-Film Sensors for SOI-CMOS Co-integration covers the challenges and interests and demonstrates the successful co-integration of gas-flow sensors on dielectric membrane, with their associated electronics, in CMOS-SOI technology. We firstly investigate the extraction of residual stress in thin layers and in their stacking and the release, in post-processing, of a 1 µm-thick robust and flat dielectric multilayered membrane using Tetramethyl Ammonium Hydroxide (TMAH) silicon micromachining solution. The optimization of its selectivity towards aluminum is largely demonstrated. The second part focuses on sensors design and characteristics. A novel loop-shape polysilicon microheater is designed and built in a CMOS-SOI standard process. High thermal uniformity, low power consumption and high working temperature are confirmed by extensive measurements. The additional gas flow sensing layers are judiciously chosen and implemented. Measurements in the presence of a nitrogen flow and gas reveal fair sensitivity on a large flow velocity range as well as good response to many gases. Finally, MOS transistors suspended on released dielectric membranes are presented and fully characterized as a concluding demonstrator of the co-integration in SOI technology.

Keywords

Gas flow. --- Thin film devices. --- Silicon-on-insulator technology. --- Metal oxide semiconductors, Complementary. --- Flow of gas --- Gases, Flow of --- Aerodynamics --- Gas dynamics --- Air flow --- CMOS (Electronics) --- Complementary metal oxide semiconductors --- Semiconductors, Complementary metal oxide --- Digital electronics --- Logic circuits --- Transistor-transistor logic circuits --- SOI devices --- Electric insulators and insulation --- Semiconductors --- Devices, Thin film --- Electronic apparatus and appliances --- Thin films --- Engineering. --- Mechanics. --- Industrial engineering. --- Electronics. --- Systems engineering. --- Engineering, general. --- Classical Mechanics. --- Industrial and Production Engineering. --- Electronics and Microelectronics, Instrumentation. --- Circuits and Systems. --- Solid State Physics. --- Electrical engineering --- Physical sciences --- Engineering systems --- System engineering --- Engineering --- Industrial engineering --- System analysis --- Management engineering --- Simplification in industry --- Value analysis (Cost control) --- Classical mechanics --- Newtonian mechanics --- Physics --- Dynamics --- Quantum theory --- Construction --- Industrial arts --- Technology --- Design and construction --- Production engineering. --- Microelectronics. --- Electronic circuits. --- Solid state physics. --- Solids --- Electron-tube circuits --- Electric circuits --- Electron tubes --- Electronics --- Microminiature electronic equipment --- Microminiaturization (Electronics) --- Microtechnology --- Miniature electronic equipment --- Manufacturing engineering --- Process engineering --- Mechanical engineering


Book
Elaboration d'une chaîne intégrée de mesure d'induction magnétique en vue du contrôle d'actionneurs électriques haute température
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Year: 1998 Publisher: Louvain-la-Neuve: UCL,

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Conception et réalisation d'un circuit intégré analogique en technologie SOI pour une prothèse visuelle implantable
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Year: 1997 Publisher: Louvain-la-Neuve: UCL,

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Micromachined thin-film sensors for SOI-CMOS co-integration
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ISBN: 0387288422 9780387288420 Year: 2006 Publisher: Dordrecht: Springer,

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Low power techniques and neural applications in microelectronics
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ISBN: 8492252960 9788492252961 Year: 2000 Publisher: Barcelona: Universitat autònoma de Barcelona. Centre de visió per computador,

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Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting
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ISSN: 16121317 ISBN: 3319088041 3319088033 1322137633 9783319088037 Year: 2014 Publisher: Cham : Springer International Publishing : Imprint: Springer,

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This book contains reviews of recent experimental and theoretical results related to nanomaterials. It focuses on novel functional materials and nanostructures in combination with silicon on insulator (SOI) devices, as well as on the physics of new devices and sensors, nanostructured materials and nanoscaled device characterization. Special attention is paid to fabrication and properties of modern low-power, high-performance, miniaturized, portable sensors in a wide range of applications such as telecommunications, radiation control, biomedical instrumentation and chemical analysis. In this book, new approaches exploiting nanotechnologies (such as UTBB FD SOI, FinFETs, nanowires, graphene or carbon nanotubes on dielectric) to pave a way between “More Moore” and “More than Moore” are considered, in order to create different kinds of sensors and devices which will consume less electrical power, be more portable and totally compatible with modern microelectronics products.


Book
Functional nanomaterials and devices VII
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ISSN: 10226680 ISBN: 9783037859421 3037859423 9783038263234 3038263230 Year: 2014 Volume: 854 Publisher: Durntech-Zurich, Switzerland

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The volume contains some of the most recent knowledge on Functional Nanomaterials and Devices. The papers are grouped into: 1. semiconductor-on-insulator structures, devices and sensors; 2. physics of new functional nanodevices and sensors; 3. diagnostics methods of nanomaterials and devices; 4. functional nanomaterials in medicine. The first part considers transport phenomena in thin silicon layer near back SiO2-Si interface of the SOI structures fabricated with DELICATE technology, mobility increase in high doped nanowire junctionless multigate MOSFETs; photoconductance and LF noises in the

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