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Principles of Induced Polarization for Geophysical Exploration

Dielectrics --- Geophysics --- Prospecting --- Polarization (Electricity) --- Prospection géophysique --- Polarisation (Electricité) --- Geophysical methods --- Electric prospecting. --- Polarization (Electricity). --- Dielectric relaxation --- Geophysical prospecting --- Geophysical methods. --- GEOPHYSIQUE --- METHODES PROSPECTION --- PROSPECTION ELECTRIQUE --- GEOLOGIE APPLIQUEE --- PROSPECTION GISEMENTS --- METHODES GEOPHYSIQUES

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Dielectrics --- 537.226 --- Electrical engineering --- Electric insulators and insulation --- Electrical properties of dielectrics --- Materials --- Dielectrics. --- 537.226 Electrical properties of dielectrics --- Polarization (Electricity) --- Dielectric relaxation --- Polarization (Electricity). --- fysicochemie --- Electrochemistry

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The Special Issue on “Synthesis and Characterization of Ferroelectrics” reports on several physical properties of ferroelectric materials and their technological aspects. Different substitution mechanisms provide ideas toward future improvement of lead-free (Ba,Ca)(Zr,Ti)O3 piezoelectric ceramics, including the electrocaloric effect, fluorescence, and energy storage. It is established that axial and radial element segregation differently influences electrical properties of 0.68Pb(Mg1/3Nb2/3)0.32PbTiO3 (PMN-32PT for short) single crystals. While the electrical properties along the axial direction strongly depend on the PbTiO3 content, the electrical properties along the axial direction are mainly determined by the ratio of Nb and Mg. On the other hand, Fe-substitution of PMN-32PT crystals lead to an enhancement of the coercive field due to wall pinning induced by charged defect dipoles. It is also found, that capacitors based on Pt/Na0.5Bi0.5TiO3/La0.5Sr0.5CoO3 thin films display good fatigue resistance and retention. Another lead-free thin film capacitor fabricated from Ba0.3Sr0.7Zr0.18Ti0.82 features a low leakage current density and high breakdown strength. Such capacitors are essential for energy storage. Furthermore, an enhanced electrocaloric effect on 0.73Pb(Mg1/3Nb2/3)0.27PbTiO3 single crystals is demonstrated. This effect is promising for novel solid-state cooling systems.

Research & information: general --- PMN-32PT --- characterization --- segregation --- Bridgman technique --- ferroelectric materials --- piezoelectric --- ceramic --- lead-free --- PMN-32PT single crystal --- acceptor doping --- charged defects --- dielectric relaxation --- electrical conduction --- NBT epitaxial film --- ferroelectric properties --- ultraviolet light --- BSZT thin films --- capacitance properties --- RF magnetron sputtering --- PMN-PT --- single crystals --- P-E hysteresis loop --- electrocaloric effect --- Maxwell relation --- PMN-32PT --- characterization --- segregation --- Bridgman technique --- ferroelectric materials --- piezoelectric --- ceramic --- lead-free --- PMN-32PT single crystal --- acceptor doping --- charged defects --- dielectric relaxation --- electrical conduction --- NBT epitaxial film --- ferroelectric properties --- ultraviolet light --- BSZT thin films --- capacitance properties --- RF magnetron sputtering --- PMN-PT --- single crystals --- P-E hysteresis loop --- electrocaloric effect --- Maxwell relation

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The Special Issue on “Synthesis and Characterization of Ferroelectrics” reports on several physical properties of ferroelectric materials and their technological aspects. Different substitution mechanisms provide ideas toward future improvement of lead-free (Ba,Ca)(Zr,Ti)O3 piezoelectric ceramics, including the electrocaloric effect, fluorescence, and energy storage. It is established that axial and radial element segregation differently influences electrical properties of 0.68Pb(Mg1/3Nb2/3)0.32PbTiO3 (PMN-32PT for short) single crystals. While the electrical properties along the axial direction strongly depend on the PbTiO3 content, the electrical properties along the axial direction are mainly determined by the ratio of Nb and Mg. On the other hand, Fe-substitution of PMN-32PT crystals lead to an enhancement of the coercive field due to wall pinning induced by charged defect dipoles. It is also found, that capacitors based on Pt/Na0.5Bi0.5TiO3/La0.5Sr0.5CoO3 thin films display good fatigue resistance and retention. Another lead-free thin film capacitor fabricated from Ba0.3Sr0.7Zr0.18Ti0.82 features a low leakage current density and high breakdown strength. Such capacitors are essential for energy storage. Furthermore, an enhanced electrocaloric effect on 0.73Pb(Mg1/3Nb2/3)0.27PbTiO3 single crystals is demonstrated. This effect is promising for novel solid-state cooling systems.

PMN-32PT --- characterization --- segregation --- Bridgman technique --- ferroelectric materials --- piezoelectric --- ceramic --- lead-free --- PMN-32PT single crystal --- acceptor doping --- charged defects --- dielectric relaxation --- electrical conduction --- NBT epitaxial film --- ferroelectric properties --- ultraviolet light --- BSZT thin films --- capacitance properties --- RF magnetron sputtering --- PMN-PT --- single crystals --- P–E hysteresis loop --- electrocaloric effect --- Maxwell relation --- n/a --- P-E hysteresis loop

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Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures. These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices. The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures. It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects. In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered. The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative. This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications. It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.

Polarization (Electricity) --- Semiconductors. --- Crystalline semiconductors --- Semi-conductors --- Semiconducting materials --- Semiconductor devices --- Crystals --- Electrical engineering --- Electronics --- Solid state electronics --- Dielectric relaxation --- Materials --- Electronics. --- Systems engineering. --- Optical materials. --- Engineering. --- Electronics and Microelectronics, Instrumentation. --- Solid State Physics. --- Spectroscopy and Microscopy. --- Circuits and Systems. --- Optical and Electronic Materials. --- Engineering, general. --- Optics --- Construction --- Industrial arts --- Technology --- Engineering systems --- System engineering --- Engineering --- Industrial engineering --- System analysis --- Physical sciences --- Design and construction --- Microelectronics. --- Solid state physics. --- Spectroscopy. --- Microscopy. --- Electronic circuits. --- Electronic materials. --- Electronic materials --- Electron-tube circuits --- Electric circuits --- Electron tubes --- Microminiature electronic equipment --- Microminiaturization (Electronics) --- Microtechnology --- Semiconductors --- Miniature electronic equipment --- Analysis, Microscopic --- Light microscopy --- Micrographic analysis --- Microscope and microscopy --- Microscopic analysis --- Optical microscopy --- Analysis, Spectrum --- Spectra --- Spectrochemical analysis --- Spectrochemistry --- Spectrometry --- Spectroscopy --- Chemistry, Analytic --- Interferometry --- Radiation --- Wave-motion, Theory of --- Absorption spectra --- Light --- Spectroscope --- Physics --- Solids --- Qualitative --- Analytical chemistry