TY - BOOK ID - 8656205 TI - Dispersion Relations in Heavily-Doped Nanostructures PY - 2016 SN - 331920999X 3319210009 PB - Cham : Springer International Publishing : Imprint: Springer, DB - UniCat KW - Electricity & Magnetism KW - Physics KW - Physical Sciences & Mathematics KW - Physics. KW - Solid state physics. KW - Nanoscale science. KW - Nanoscience. KW - Nanostructures. KW - Semiconductors. KW - Microwaves. KW - Optical engineering. KW - Nanotechnology. KW - Microwaves, RF and Optical Engineering. KW - Nanoscale Science and Technology. KW - Solid State Physics. KW - Molecular technology KW - Nanoscale technology KW - High technology KW - Mechanical engineering KW - Hertzian waves KW - Electric waves KW - Electromagnetic waves KW - Geomagnetic micropulsations KW - Radio waves KW - Shortwave radio KW - Crystalline semiconductors KW - Semi-conductors KW - Semiconducting materials KW - Semiconductor devices KW - Crystals KW - Electrical engineering KW - Electronics KW - Solid state electronics KW - Nanoscience KW - Nano science KW - Nanoscale science KW - Nanosciences KW - Science KW - Solids KW - Natural philosophy KW - Philosophy, Natural KW - Physical sciences KW - Dynamics KW - Materials KW - Doped semiconductors. KW - Semiconductor doping KW - Semiconductors UR - https://www.unicat.be/uniCat?func=search&query=sysid:8656205 AB - This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers. ER -