TY - BOOK ID - 7834412 TI - Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications AU - Park, Byung-Eun. AU - Ishiwara, Hiroshi. AU - Okuyama, Masanori. AU - Sakai, Shigeki. AU - Yoon, Sung-Min. PY - 2016 SN - 9402408398 940240841X PB - Dordrecht : Springer Netherlands : Imprint: Springer, DB - UniCat KW - Physics. KW - Surfaces (Physics). KW - Interfaces (Physical sciences). KW - Thin films. KW - Electronic circuits. KW - Electronics. KW - Microelectronics. KW - Materials KW - Electronic Circuits and Devices. KW - Electronics and Microelectronics, Instrumentation. KW - Surfaces and Interfaces, Thin Films. KW - Circuits and Systems. KW - Surface and Interface Science, Thin Films. KW - Surfaces. KW - Ferroelectric devices. KW - Ferroelectricity. KW - Ferroelectric thin films. KW - Ferroelectric effect KW - Seignette-electricity KW - Thin films KW - Polarization (Electricity) KW - Electronic apparatus and appliances KW - Solid state electronics KW - Piezoelectric devices KW - Systems engineering. KW - Engineering systems KW - System engineering KW - Engineering KW - Industrial engineering KW - System analysis KW - Physics KW - Surface chemistry KW - Surfaces (Technology) KW - Electrical engineering KW - Physical sciences KW - Design and construction KW - Materials—Surfaces. KW - Surfaces (Physics) KW - Films, Thin KW - Solid film KW - Solids KW - Coatings KW - Thick films KW - Microminiature electronic equipment KW - Microminiaturization (Electronics) KW - Electronics KW - Microtechnology KW - Semiconductors KW - Miniature electronic equipment KW - Electron-tube circuits KW - Electric circuits KW - Electron tubes UR - https://www.unicat.be/uniCat?func=search&query=sysid:7834412 AB - This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass or plastic substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films. ER -