TY - BOOK ID - 7542040 TI - Low power and reliable SRAM memory cell and array design AU - Ishibashi, Koichiro. AU - Osada, Kenichi. PY - 2011 SN - 3642195679 9786613366665 1283366665 3642195687 PB - Berlin : Springer, DB - UniCat KW - Low voltage integrated circuits KW - Integrated circuits KW - Semiconductor storage devices KW - Electrical & Computer Engineering KW - Engineering & Applied Sciences KW - Electrical Engineering KW - Design and construction KW - Large scale integration KW - Computer storage devices. KW - Latent semantic indexing. KW - Memory management (Computer science) KW - Management of computer memory KW - Latent semantic analysis KW - LSA (Latent semantic analysis) KW - LSI (Latent semantic indexing) KW - Semantic analysis, Latent KW - Semantic indexing, Latent KW - Computer memory systems KW - Computers KW - Electronic digital computers KW - Storage devices, Computer KW - Memory systems KW - Storage devices KW - Engineering. KW - Electronics. KW - Microelectronics. KW - Electronics and Microelectronics, Instrumentation. KW - Engineering, general. KW - Computer storage devices KW - Loop tiling (Computer science) KW - Semantics KW - Text processing (Computer science) KW - Computer input-output equipment KW - Data processing KW - Construction KW - Industrial arts KW - Technology KW - Electrical engineering KW - Physical sciences KW - Microminiature electronic equipment KW - Microminiaturization (Electronics) KW - Electronics KW - Microtechnology KW - Semiconductors KW - Miniature electronic equipment UR - https://www.unicat.be/uniCat?func=search&query=sysid:7542040 AB - Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design. ER -