TY - BOOK ID - 46171960 TI - Device Physics, Modeling, Technology, and Analysis for Silicon MESFET AU - Amiri, Iraj Sadegh. AU - Mohammadi, Hossein. AU - Hosseinghadiry, Mahdiar. PY - 2019 SN - 3030045137 3030045129 PB - Cham : Springer International Publishing : Imprint: Springer, DB - UniCat KW - Metal semiconductor field-effect transistors KW - Mathematical models. KW - Systems engineering. KW - Electronics. KW - Circuits and Systems. KW - Electronic Circuits and Devices. KW - Electronics and Microelectronics, Instrumentation. KW - Electrical engineering KW - Physical sciences KW - Engineering systems KW - System engineering KW - Engineering KW - Industrial engineering KW - System analysis KW - Design and construction KW - Electronic circuits. KW - Microelectronics. KW - Microminiature electronic equipment KW - Microminiaturization (Electronics) KW - Electronics KW - Microtechnology KW - Semiconductors KW - Miniature electronic equipment KW - Electron-tube circuits KW - Electric circuits KW - Electron tubes UR - https://www.unicat.be/uniCat?func=search&query=sysid:46171960 AB - This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications. Describes the evolution of MESFET in the semiconductor industry; Discusses challenges and solutions associated with downscaling; Provides comprehensive information on the structure and operation of silicon MESFETs. ER -