TY - BOOK ID - 217244 TI - Narrow gap semiconductors 2007 : proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK AU - Murdin, B. N. AU - Clowes, S. K. AU - International Conference on Narrow-Gap Semiconductors and Related Materials PY - 2008 SN - 1281920347 9786611920340 1402084250 1402084242 PB - Dordrecht ; Bristol : Springer Verlag in association with Canopus, DB - UniCat KW - Narrow gap semiconductors KW - Gapless semiconductors KW - Zero gap semiconductors KW - Energy gap (Physics) KW - Semiconductors KW - Optical materials. KW - Surfaces (Physics). KW - Engineering. KW - Optical and Electronic Materials. KW - Characterization and Evaluation of Materials. KW - Optics, Lasers, Photonics, Optical Devices. KW - Engineering, general. KW - Physics KW - Surface chemistry KW - Surfaces (Technology) KW - Construction KW - Industrial arts KW - Technology KW - Optics KW - Materials KW - Electronic materials. KW - Materials science. KW - Lasers. KW - Photonics. KW - New optics KW - Light amplification by stimulated emission of radiation KW - Masers, Optical KW - Optical masers KW - Light amplifiers KW - Light sources KW - Optoelectronic devices KW - Nonlinear optics KW - Optical parametric oscillators KW - Material science KW - Physical sciences KW - Electronic materials UR - https://www.unicat.be/uniCat?func=search&query=sysid:217244 AB - Narrow gap semiconductors have provided an exciting field of research and show a number of extreme physical and material characteristics. They are the established material systems for infrared detectors and emitters, and with new developments in the technology these materials are emerging as a viable route to high speed, low power electronics. New kinds of narrow gap semiconductor, such as graphene and other composite nanocrystals, are also providing renewed interest in the underlying physics. The Thirteenth International Conference on Narrow Gap Semiconductors (NGS-13) was held at the University of Surrey, Guildford, UK in July 2007. The conference brought together experts and young scientists to discuss the latest findings and developments in the field. This book contains the invited and contributed papers which were presented at this meeting and serves to provide a broad overview of the current worldwide activities in narrow gap semiconductor research. The subjects covered are theoretical and material physics of narrow gap semiconductors and quantum heterostructures, spin related phenomenon including carrier dynamics and magnetotransport, carbon nanotubes and graphene as novel narrow gap material, as well as device physics including transistors, mid and far-infrared lasers and detectors. ER -