TY - BOOK ID - 215360 TI - Advanced gate stacks for high-mobility semiconductors PY - 2007 SN - 1281179302 9786611179304 354071491X 3540714901 3642090710 9783540714903 PB - Berlin : Springer, DB - UniCat KW - Engineering. KW - Electronics. KW - Microelectronics. KW - Electronics and Microelectronics, Instrumentation. KW - Microminiature electronic equipment KW - Microminiaturization (Electronics) KW - Electronics KW - Microtechnology KW - Semiconductors KW - Miniature electronic equipment KW - Electrical engineering KW - Physical sciences KW - Construction KW - Industrial arts KW - Technology KW - Gate array circuits KW - Metal oxide semiconductors. KW - Metal oxide semiconductors, Complementary. KW - Dielectrics. KW - Germanium compounds. KW - Materials. KW - Gate arrays KW - Integrated circuits KW - Chemicals KW - Electric insulators and insulation KW - CMOS (Electronics) KW - Complementary metal oxide semiconductors KW - Semiconductors, Complementary metal oxide KW - Digital electronics KW - Logic circuits KW - Transistor-transistor logic circuits KW - Unipolar transistors KW - Transistors KW - Charge coupled devices KW - Materials KW - Dielectrics KW - Germanium compounds KW - Metal oxide semiconductors KW - Metal oxide semiconductors, Complementary KW - 621.3.049.77 KW - 621.3.049.77 Microelectronics. Integrated circuits KW - Microelectronics. Integrated circuits UR - https://www.unicat.be/uniCat?func=search&query=sysid:215360 AB - Will nanoelectronic devices continue to scale according to Moore’s law? At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained Si, alternative orientation substrates, Ge or III-V compounds) could help overcome the obstacles since they offer performance enhancement. There are several concerns though. Do we know how to make complex engineered substrates (e.g. Germanium-on-Insulator)? Which are the best interface passivation methodologies and (high-k) gate dielectrics on Ge and III-V compounds? Can we process these materials in short channel transistors using flows, toolsets and know how similar to that in Si technology? How do these materials and devices behave at the nanoscale? The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any close to a viable Ge and III-V MOS technology. ER -