TY - BOOK ID - 211315 TI - Ion implantation and synthesis of materials AU - Nastasi, Michael Anthony AU - Mayer, James W. PY - 2006 SN - 1280865989 9786610865987 3540452982 3540236740 3642062598 PB - Berlin ; New York : Springer-Verlag, DB - UniCat KW - Ion implantation. KW - Metals KW - Finishing. KW - Metal finishing KW - Finishes and finishing KW - Metal-work KW - Implantation, Ion KW - Ion bombardment KW - Ion plating KW - Particle acceleration. KW - Optical materials. KW - Surfaces (Physics). KW - Chemistry, Physical organic. KW - Particle Acceleration and Detection, Beam Physics. KW - Condensed Matter Physics. KW - Optical and Electronic Materials. KW - Characterization and Evaluation of Materials. KW - Physical Chemistry. KW - Chemistry, Physical organic KW - Chemistry, Organic KW - Chemistry, Physical and theoretical KW - Physics KW - Surface chemistry KW - Surfaces (Technology) KW - Optics KW - Materials KW - Particles (Nuclear physics) KW - Acceleration (Mechanics) KW - Nuclear physics KW - Acceleration KW - Condensed matter. KW - Electronic materials. KW - Materials science. KW - Physical chemistry. KW - Chemistry, Theoretical KW - Physical chemistry KW - Theoretical chemistry KW - Chemistry KW - Material science KW - Physical sciences KW - Electronic materials KW - Condensed materials KW - Condensed media KW - Condensed phase KW - Materials, Condensed KW - Media, Condensed KW - Phase, Condensed KW - Liquids KW - Matter KW - Solids UR - https://www.unicat.be/uniCat?func=search&query=sysid:211315 AB - Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described. ER -