TY - BOOK ID - 146070883 TI - Silicon Nanodevices AU - Radamson, Henry AU - Wang, Guilei PY - 2022 PB - Basel MDPI Books DB - UniCat KW - Technology: general issues KW - silicon KW - yolk−shell structure KW - anode KW - lithium-ion batteries KW - in-plane nanowire KW - site-controlled KW - epitaxial growth KW - germanium KW - nanowire-based quantum devices KW - HfO2/Si0.7Ge0.3 gate stack KW - ozone oxidation KW - Si-cap KW - interface state density KW - passivation KW - GOI KW - photodetectors KW - dark current KW - responsivity KW - prussian blue nanoparticles KW - organotrialkoxysilane KW - silica beads KW - arsenite KW - arsenate KW - water decontamination KW - vertical gate-all-around (vGAA) KW - digital etch KW - quasi-atomic-layer etching (q-ALE) KW - selective wet etching KW - HNO3 concentration KW - doping effect KW - vertical Gate-all-around (vGAA) KW - p+-Ge0.8Si0.2/Ge stack KW - dual-selective wet etching KW - atomic layer etching (ALE) KW - stacked SiGe/Si KW - epitaxial grown KW - Fin etching KW - FinFET KW - short-term potentiation (STP) KW - long-term potentiation (LTP) KW - charge-trap synaptic transistor KW - band-to-band tunneling KW - pattern recognition KW - neural network KW - neuromorphic system KW - Si-MOS KW - quantum dot KW - spin qubits KW - quantum computing KW - GeSn KW - CVD KW - lasers KW - detectors KW - transistors KW - III-V on Si KW - heteroepitaxy KW - threading dislocation densities (TDDs) KW - anti-phase boundaries (APBs) KW - selective epitaxial growth (SEG) KW - silicon KW - yolk−shell structure KW - anode KW - lithium-ion batteries KW - in-plane nanowire KW - site-controlled KW - epitaxial growth KW - germanium KW - nanowire-based quantum devices KW - HfO2/Si0.7Ge0.3 gate stack KW - ozone oxidation KW - Si-cap KW - interface state density KW - passivation KW - GOI KW - photodetectors KW - dark current KW - responsivity KW - prussian blue nanoparticles KW - organotrialkoxysilane KW - silica beads KW - arsenite KW - arsenate KW - water decontamination KW - vertical gate-all-around (vGAA) KW - digital etch KW - quasi-atomic-layer etching (q-ALE) KW - selective wet etching KW - HNO3 concentration KW - doping effect KW - vertical Gate-all-around (vGAA) KW - p+-Ge0.8Si0.2/Ge stack KW - dual-selective wet etching KW - atomic layer etching (ALE) KW - stacked SiGe/Si KW - epitaxial grown KW - Fin etching KW - FinFET KW - short-term potentiation (STP) KW - long-term potentiation (LTP) KW - charge-trap synaptic transistor KW - band-to-band tunneling KW - pattern recognition KW - neural network KW - neuromorphic system KW - Si-MOS KW - quantum dot KW - spin qubits KW - quantum computing KW - GeSn KW - CVD KW - lasers KW - detectors KW - transistors KW - III-V on Si KW - heteroepitaxy KW - threading dislocation densities (TDDs) KW - anti-phase boundaries (APBs) KW - selective epitaxial growth (SEG) UR - https://www.unicat.be/uniCat?func=search&query=sysid:146070883 AB - This book is a collection of scientific articles which brings research in Si nanodevices, device processing, and materials. The content is oriented to optoelectronics with a core in electronics and photonics. The issue of current technology developments in the nanodevices towards 3D integration and an emerging of the electronics and photonics as an ultimate goal in nanotechnology in the future is presented. The book contains a few review articles to update the knowledge in Si-based devices and followed by processing of advanced nano-scale transistors. Furthermore, material growth and manufacturing of several types of devices are presented. The subjects are carefully chosen to critically cover the scientific issues for scientists and doctoral students. ER -