TY - BOOK ID - 145604270 TI - Fundamentals and Recent Advances in Epitaxial Graphene on SiC AU - Yakimova, Rositsa AU - Shtepliuk, Ivan PY - 2021 PB - Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute DB - UniCat KW - Technology: general issues KW - epitaxial graphene KW - copper KW - redox reaction KW - electrodeposition KW - voltammetry KW - chronoamperometry KW - DFT KW - silicon carbide KW - Raman spectroscopy KW - 2D peak line shape KW - G peak KW - charge density KW - strain KW - atomic layer deposition KW - high-k insulators KW - ion implantation KW - Raman KW - AFM KW - XPS KW - graphene KW - SiC KW - 3C-SiC on Si KW - substrate interaction KW - carrier concentration KW - mobility KW - intercalation KW - buffer layer KW - surface functionalization KW - twistronics KW - twisted bilayer graphene KW - flat band KW - epitaxial graphene on SiC KW - quasi-free-standing graphene KW - monolayer graphene KW - high-temperature sublimation KW - terahertz optical Hall effect KW - free charge carrier properties KW - sublimation KW - electronic properties KW - material engineering KW - deposition KW - epitaxial graphene KW - copper KW - redox reaction KW - electrodeposition KW - voltammetry KW - chronoamperometry KW - DFT KW - silicon carbide KW - Raman spectroscopy KW - 2D peak line shape KW - G peak KW - charge density KW - strain KW - atomic layer deposition KW - high-k insulators KW - ion implantation KW - Raman KW - AFM KW - XPS KW - graphene KW - SiC KW - 3C-SiC on Si KW - substrate interaction KW - carrier concentration KW - mobility KW - intercalation KW - buffer layer KW - surface functionalization KW - twistronics KW - twisted bilayer graphene KW - flat band KW - epitaxial graphene on SiC KW - quasi-free-standing graphene KW - monolayer graphene KW - high-temperature sublimation KW - terahertz optical Hall effect KW - free charge carrier properties KW - sublimation KW - electronic properties KW - material engineering KW - deposition UR - https://www.unicat.be/uniCat?func=search&query=sysid:145604270 AB - This book is a compilation of recent studies by recognized experts in the field of epitaxial graphene working towards a deep comprehension of growth mechanisms, property engineering, and device processing. The results of investigations published within this book develop cumulative knowledge on matters related to device-quality epaxial graphene on SiC, bringing this material closer to realistic applications. ER -