TY - BOOK ID - 14200126 TI - Optical Properties of Bismuth-Based Topological Insulators PY - 2014 SN - 3319019902 3319019910 PB - Cham : Springer International Publishing : Imprint: Springer, DB - UniCat KW - Electric insulators and insulation. KW - Materials KW - Strength of materials. KW - Mechanical properties. KW - Architectural engineering KW - Engineering, Architectural KW - Materials, Strength of KW - Resistance of materials KW - Mechanical behavior of materials KW - Mechanical properties of materials KW - Bushings KW - Insulation (Electric) KW - Mechanical behavior KW - Physics. KW - Solid state physics. KW - Semiconductors. KW - Optical materials. KW - Electronic materials. KW - Materials science. KW - Thin films. KW - Optical and Electronic Materials. KW - Solid State Physics. KW - Surfaces and Interfaces, Thin Films. KW - Characterization and Evaluation of Materials. KW - Surfaces. KW - Building materials KW - Flexure KW - Mechanics KW - Testing KW - Elasticity KW - Graphic statics KW - Strains and stresses KW - Electric resistance KW - Insulating materials KW - Dielectrics KW - Surfaces (Physics). KW - Topological insulators. KW - Physics KW - Surface chemistry KW - Surfaces (Technology) KW - Optics KW - Materials—Surfaces. KW - Material science KW - Physical sciences KW - Films, Thin KW - Solid film KW - Solid state electronics KW - Solids KW - Coatings KW - Thick films KW - Electronic materials KW - Crystalline semiconductors KW - Semi-conductors KW - Semiconducting materials KW - Semiconductor devices KW - Crystals KW - Electrical engineering KW - Electronics KW - Materials. UR - https://www.unicat.be/uniCat?func=search&query=sysid:14200126 AB - Topological Insulators (TIs)  are insulators in the bulk, but have exotic metallic states at their surfaces. The topology, associated with the electronic wavefunctions of these systems, changes when passing from the bulk to the surface.This work studies, by means of infrared spectroscopy, the low energy optical conductivity of Bismuth based TIs in order to identify the extrinsic charge contribution of the bulk and to separate it from the intrinsic contribution of the surface state carriers. The extensive results presented in this thesis definitely shows the 2D character of the carriers in Bismuth-based topological insulators. The experimental apparatus and the FTIR technique, the theory of optical properties and Surface Plasmon Polaritons, as well as sample preparation of both crystals and thin films, and the analysis procedures are thoroughly described. ER -