TY - BOOK ID - 137783397 TI - SiC based Miniaturized Devices AU - Saddow, Stephen Edward. AU - Alquier, Daniel. AU - Wang, Jing AU - La Via, Francesco. AU - Fraga, Mariana Amorim AU - Saddow, Stephen E. AU - Alquier, Daniel AU - La Via, Francesco AU - Fraga, Mariana PY - 2020 PB - Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute DB - UniCat KW - Engineering KW - History. KW - high-power impulse magnetron sputtering (HiPIMS) KW - silicon carbide KW - aluminum nitride KW - thin film KW - Rutherford backscattering spectrometry (RBS) KW - grazing incidence X-ray diffraction (GIXRD) KW - Raman spectroscopy KW - 6H-SiC KW - indentation KW - deformation KW - material removal mechanisms KW - critical load KW - 4H-SiC KW - critical depth of cut KW - Berkovich indenter KW - cleavage strength KW - nanoscratching KW - power electronics KW - high-temperature converters KW - MEMS devices KW - SiC power electronic devices KW - neural interface KW - neural probe KW - neural implant KW - microelectrode array KW - MEA KW - SiC KW - 3C-SiC KW - doped SiC KW - n-type KW - p-type KW - amorphous SiC KW - epitaxial growth KW - electrochemical characterization KW - MESFET KW - simulation KW - PAE KW - bulk micromachining KW - electrochemical etching KW - circular membrane KW - bulge test KW - vibrometry KW - mechanical properties KW - Young’s modulus KW - residual stress KW - FEM KW - semiconductor radiation detector KW - microstrip detector KW - power module KW - negative gate-source voltage spike KW - 4H-SiC, epitaxial layer KW - Schottky barrier KW - radiation detector KW - point defects KW - deep level transient spectroscopy (DLTS) KW - thermally stimulated current spectroscopy (TSC) KW - electron beam induced current spectroscopy (EBIC) KW - pulse height spectroscopy (PHS) KW - n/a KW - Young's modulus UR - https://www.unicat.be/uniCat?func=search&query=sysid:137783397 AB - MEMS devices are found in many of today’s electronic devices and systems, from air-bag sensors in cars to smart phones, embedded systems, etc. Increasingly, the reduction in dimensions has led to nanometer-scale devices, called NEMS. The plethora of applications on the commercial market speaks for itself, and especially for the highly precise manufacturing of silicon-based MEMS and NEMS. While this is a tremendous achievement, silicon as a material has some drawbacks, mainly in the area of mechanical fatigue and thermal properties. Silicon carbide (SiC), a well-known wide-bandgap semiconductor whose adoption in commercial products is experiening exponential growth, especially in the power electronics arena. While SiC MEMS have been around for decades, in this Special Issue we seek to capture both an overview of the devices that have been demonstrated to date, as well as bring new technologies and progress in the MEMS processing area to the forefront. Thus, this Special Issue seeks to showcase research papers, short communications, and review articles that focus on: (1) novel designs, fabrication, control, and modeling of SiC MEMS and NEMS based on all kinds of actuation mechanisms; and (2) new developments in applying SiC MEMS and NEMS in consumer electronics, optical communications, industry, medicine, agriculture, space, and defense. ER -