TY - BOOK ID - 135578804 TI - Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching AU - Semendy, Fred. AU - Boyd, Phillip. AU - Lee, Unchul. AU - U.S. Army Research Laboratory. PY - 2004 PB - Adelphi, MD : Army Research Laboratory, DB - UniCat KW - Plasma etching. KW - Gallium nitride. UR - https://www.unicat.be/uniCat?func=search&query=sysid:135578804 AB - ER -