TY - THES ID - 134578980 TI - Tin disulphide chemical vapour deposition. Investigation of nucleation and growth behaviour. AU - van Pelt, Thomas AU - Delabie, Annelies. AU - KU Leuven. Faculteit Wetenschappen. Opleiding Master in de chemie (Leuven) PY - 2017 PB - Leuven KU Leuven. Faculteit Wetenschappen DB - UniCat UR - https://www.unicat.be/uniCat?func=search&query=sysid:134578980 AB - The development of new semiconductor materials is one of the prime targets for the microelectronics industry. Tin disulphide (SnS2) is one such semiconductor material. It has a two dimensional layered structure which defines its chemical and physical properties. Currently no process has been developed to create SnS2 films with high structural quality at an industrial level. Chemical vapour deposition (CVD) is one technique that could offer an answer to this problem. To develop such a CVD process, it is necessary to have a good understanding of the mechanisms (nucleation and growth) that define said process. This dissertation, investigates the nucleation and growth of SnS2 using a SnCl4 / H2S CVD process for SnS2 on SiO2 wafers. The first part of experiments consists of the investigation of the temperature range in which SnS2 can be grown. To this end, Rutherford backscattering spectroscopy (RBS) is used to quantify the amount of deposited SnS2 . Various other techniques, e.g. Raman spectroscopy, X-ray diffraction (XRD) and scanning electron microscopy (SEM), are used to examine the composition, phase and morphology of the SnS2 samples. It is found that in a temperature range of 300 to 400 ◦C SnS 2 deposition is possible for a SnCl4 / H2S ratio of 1/10, and that at 400 ◦C the films show the best crystal orientation. The second part of experiments looks at the nucleation and growth of SnS2 for CVD at 400 ◦C. The growth at 400 ◦C is followed using a.o. atomic force microscopy (AFM) for deposition times from five seconds to half an hour. A growth model is proposed, which consists of two growth regimes. The first regime consists of the nucleation on the SiO2 substrate and growth of the formed grains up to an incomplete layer closure, with a preferential lateral growth. A delayed growth model is proposed describing the formation of amorphous 3D islands, followed by crystallisation and lateral growth. The second regime describes the formation of a rough SnS2 layer via a 3D-growth. This regime is characterised by the formation of pyramidal like spirals, combined with growth of holes in the SnS2 film. It is concluded that the growth rate is too high. The surface diffusion of adatoms and their lattice incorporation rate is too low, compared to the adsorption rate of adatoms, to allow SnS 2 to grow via a 2D mechanism. For that reason, it is proposed that the main focus of further research should be; to decrease the growth rate of SnS 2 , and thus allow a more controlled and 2D growth. ER -