TY - BOOK ID - 125682987 TI - Modeling nanowire and double-gate junctionless field-effect transistors AU - Jazaeri, Farzan AU - Sallese, Jean-Michel PY - 2018 SN - 1108581390 1316676897 1108557538 PB - Cambridge : Cambridge University Press, DB - UniCat KW - Metal semiconductor field-effect transistors. KW - Nanowires. UR - https://www.unicat.be/uniCat?func=search&query=sysid:125682987 AB - The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models for double-gate and nanowire configurations, before offering a general introduction to the EPFL charge-based model of junctionless FETs. Important features are introduced gradually, including nanowire versus double-gate equivalence, technological design space, junctionless FET performances, short channel effects, transcapacitances, asymmetric operation, thermal noise, interface traps, and the junction FET. Additional features compatible with biosensor applications are also discussed. This is a valuable resource for students and researchers looking to understand more about this new and fast developing field. ER -