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This book is a compilation of recent studies by recognized experts in the field of epitaxial graphene working towards a deep comprehension of growth mechanisms, property engineering, and device processing. The results of investigations published within this book develop cumulative knowledge on matters related to device-quality epaxial graphene on SiC, bringing this material closer to realistic applications.

epitaxial graphene --- copper --- redox reaction --- electrodeposition --- voltammetry --- chronoamperometry --- DFT --- silicon carbide --- Raman spectroscopy --- 2D peak line shape --- G peak --- charge density --- strain --- atomic layer deposition --- high-k insulators --- ion implantation --- Raman --- AFM --- XPS --- graphene --- SiC --- 3C-SiC on Si --- substrate interaction --- carrier concentration --- mobility --- intercalation --- buffer layer --- surface functionalization --- twistronics --- twisted bilayer graphene --- flat band --- epitaxial graphene on SiC --- quasi-free-standing graphene --- monolayer graphene --- high-temperature sublimation --- terahertz optical Hall effect --- free charge carrier properties --- sublimation --- electronic properties --- material engineering --- deposition

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

This book is a compilation of recent studies by recognized experts in the field of epitaxial graphene working towards a deep comprehension of growth mechanisms, property engineering, and device processing. The results of investigations published within this book develop cumulative knowledge on matters related to device-quality epaxial graphene on SiC, bringing this material closer to realistic applications.

Technology: general issues --- epitaxial graphene --- copper --- redox reaction --- electrodeposition --- voltammetry --- chronoamperometry --- DFT --- silicon carbide --- Raman spectroscopy --- 2D peak line shape --- G peak --- charge density --- strain --- atomic layer deposition --- high-k insulators --- ion implantation --- Raman --- AFM --- XPS --- graphene --- SiC --- 3C-SiC on Si --- substrate interaction --- carrier concentration --- mobility --- intercalation --- buffer layer --- surface functionalization --- twistronics --- twisted bilayer graphene --- flat band --- epitaxial graphene on SiC --- quasi-free-standing graphene --- monolayer graphene --- high-temperature sublimation --- terahertz optical Hall effect --- free charge carrier properties --- sublimation --- electronic properties --- material engineering --- deposition --- epitaxial graphene --- copper --- redox reaction --- electrodeposition --- voltammetry --- chronoamperometry --- DFT --- silicon carbide --- Raman spectroscopy --- 2D peak line shape --- G peak --- charge density --- strain --- atomic layer deposition --- high-k insulators --- ion implantation --- Raman --- AFM --- XPS --- graphene --- SiC --- 3C-SiC on Si --- substrate interaction --- carrier concentration --- mobility --- intercalation --- buffer layer --- surface functionalization --- twistronics --- twisted bilayer graphene --- flat band --- epitaxial graphene on SiC --- quasi-free-standing graphene --- monolayer graphene --- high-temperature sublimation --- terahertz optical Hall effect --- free charge carrier properties --- sublimation --- electronic properties --- material engineering --- deposition