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Electronics and optics of solids --- Electronics --- Electrical engineering --- Artificial intelligence. Robotics. Simulation. Graphics --- Computer. Automation --- nanotechniek --- vormgeving --- simulaties --- algoritmen --- elektronica --- transistoren --- halfgeleiders --- numerieke analyse
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The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.
Electronics and optics of solids --- Electronics --- Electrical engineering --- Artificial intelligence. Robotics. Simulation. Graphics --- Computer. Automation --- nanotechniek --- vormgeving --- simulaties --- algoritmen --- elektronica --- transistoren --- halfgeleiders --- numerieke analyse
Choose an application
The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.
Engineering. --- Computer simulation. --- Computational intelligence. --- Electronics. --- Microelectronics. --- Optical materials. --- Electronic materials. --- Nanotechnology. --- Electronics and Microelectronics, Instrumentation. --- Optical and Electronic Materials. --- Computational Intelligence. --- Simulation and Modeling. --- Molecular technology --- Nanoscale technology --- High technology --- Electronic materials --- Optics --- Materials --- Microminiature electronic equipment --- Microminiaturization (Electronics) --- Electronics --- Microtechnology --- Semiconductors --- Miniature electronic equipment --- Electrical engineering --- Physical sciences --- Intelligence, Computational --- Artificial intelligence --- Soft computing --- Computer modeling --- Computer models --- Modeling, Computer --- Models, Computer --- Simulation, Computer --- Electromechanical analogies --- Mathematical models --- Simulation methods --- Model-integrated computing --- Construction --- Industrial arts --- Technology --- Electric conductivity --- Conductivity, Electric --- Free electron theory of metals --- Transport theory
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