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Microelectronics is one of the most rapidly changing scientific fields today. The tendency to shrink devices as far as possible results in extremely small devices which can no longer be described using simple analytical models. This book covers various aspects of advanced device modeling and simulation. As such it presents extensive reviews and original research by outstanding scientists. The bulk of the book is concerned with the theory of classical and quantum-mechanical transport modeling, based on macroscopic, spherical harmonics and Monte Carlo methods.

Microelectronics. --- Simulation methods. --- Simulation techniques --- System simulation --- Operations research --- Systems engineering --- Models and modelmaking --- Microminiature electronic equipment --- Microminiaturization (Electronics) --- Electronics --- Microtechnology --- Semiconductors --- Miniature electronic equipment

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In this book, we aim to address the ever-advancing progress in microelectronic device scaling. Complementary Metal-Oxide-Semiconductor (CMOS) devices continue to endure miniaturization, irrespective of the seeming physical limitations, helped by advancing fabrication techniques. We observe that miniaturization does not always refer to the latest technology node for digital transistors. Rather, by applying novel materials and device geometries, a significant reduction in the size of microelectronic devices for a broad set of applications can be achieved. The achievements made in the scaling of devices for applications beyond digital logic (e.g., high power, optoelectronics, and sensors) are taking the forefront in microelectronic miniaturization. Furthermore, all these achievements are assisted by improvements in the simulation and modeling of the involved materials and device structures. In particular, process and device technology computer-aided design (TCAD) has become indispensable in the design cycle of novel devices and technologies. It is our sincere hope that the results provided in this Special Issue prove useful to scientists and engineers who find themselves at the forefront of this rapidly evolving and broadening field. Now, more than ever, it is essential to look for solutions to find the next disrupting technologies which will allow for transistor miniaturization well beyond silicon’s physical limits and the current state-of-the-art. This requires a broad attack, including studies of novel and innovative designs as well as emerging materials which are becoming more application-specific than ever before.

FinFETs --- CMOS --- device processing --- integrated circuits --- silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) --- solid state circuit breaker (SSCB) --- prototype --- circuit design --- GaN --- HEMT --- high gate --- multi-recessed buffer --- power density --- power-added efficiency --- 4H-SiC --- MESFET --- IMRD structure --- power added efficiency --- 1200 V SiC MOSFET --- body diode --- surge reliability --- silvaco simulation --- floating gate transistor --- control gate --- CMOS device --- active noise control --- vacuum channel --- mean free path --- vertical air-channel diode --- vertical transistor --- field emission --- particle trajectory model --- F–N plot --- space-charge-limited currents --- 4H-SiC MESFET --- simulation --- power added efficiency (PAE) --- new device --- three-input transistor --- T-channel --- compact circuit style --- CMOS compatible technology --- avalanche photodiode --- SPICE model --- bandwidth --- high responsivity --- silicon photodiode --- AlGaN/GaN HEMTs --- thermal simulation --- transient channel temperature --- pulse width --- gate structures --- band-to-band tunnelling (BTBT) --- tunnelling field-effect transistor (TFET) --- germanium-around-source gate-all-around TFET (GAS GAA TFET) --- average subthreshold swing --- direct source-to-drain tunneling --- transport effective mass --- confinement effective mass --- multi-subband ensemble Monte Carlo --- non-equilibrium Green’s function --- DGSOI --- FinFET --- core-insulator --- gate-all-around --- field effect transistor --- GAA --- nanowire --- one-transistor dynamic random-access memory (1T-DRAM) --- polysilicon --- grain boundary --- electron trapping --- flexible transistors --- polymers --- metal oxides --- nanocomposites --- dielectrics --- active layers --- nanotransistor --- quantum transport --- Landauer–Büttiker formalism --- R-matrix method --- nanoscale --- mosfet --- quantum current --- surface transfer doping --- 2D hole gas (2DHG) --- diamond --- MoO3 --- V2O5 --- MOSFET --- reliability --- random telegraph noise --- oxide defects --- SiO2 --- split-gate trench power MOSFET --- multiple epitaxial layers --- specific on-resistance --- device reliability --- nanoscale transistor --- bias temperature instabilities (BTI) --- defects --- single-defect spectroscopy --- non-radiative multiphonon (NMP) model --- time-dependent defect spectroscopy --- n/a --- F-N plot --- non-equilibrium Green's function --- Landauer-Büttiker formalism

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The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta­ tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec­ trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.

Engineering. --- Computer simulation. --- Computational intelligence. --- Electronics. --- Microelectronics. --- Optical materials. --- Electronic materials. --- Nanotechnology. --- Electronics and Microelectronics, Instrumentation. --- Optical and Electronic Materials. --- Computational Intelligence. --- Simulation and Modeling. --- Molecular technology --- Nanoscale technology --- High technology --- Electronic materials --- Optics --- Materials --- Microminiature electronic equipment --- Microminiaturization (Electronics) --- Electronics --- Microtechnology --- Semiconductors --- Miniature electronic equipment --- Electrical engineering --- Physical sciences --- Intelligence, Computational --- Artificial intelligence --- Soft computing --- Computer modeling --- Computer models --- Modeling, Computer --- Models, Computer --- Simulation, Computer --- Electromechanical analogies --- Mathematical models --- Simulation methods --- Model-integrated computing --- Construction --- Industrial arts --- Technology --- Electric conductivity --- Conductivity, Electric --- Free electron theory of metals --- Transport theory